Deposition and characterization of ITO films produced by laser ablation at 355 nm

被引:26
作者
Holmelund, E
Thestrup, B
Schou, J [1 ]
Larsen, NB
Nielsen, MM
Johnson, E
Tougaard, S
机构
[1] Riso Natl Lab, Dept Opt & Fluid Dynam, DK-4000 Roskilde, Denmark
[2] Riso Natl Lab, Dept Condensed Matter Phys & Chem, DK-4000 Roskilde, Denmark
[3] Univ Copenhagen, Niels Bohr Inst, Orsted Lab, DK-2100 Copenhagen, Denmark
[4] Univ So Denmark, Inst Phys, DK-5230 Odense M, Denmark
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 74卷 / 02期
关键词
D O I
10.1007/s003390100976
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Indium tin oxide (ITO) films have been deposited by pulsed laser deposition (PLD) at 355 nm. Even though the absorption of laser light at the wavelength 355 nm is much smaller than that of the standard excimer lasers for PLD at 248 nm and 193 nm, high-quality films can be produced. At high fluence and at high substrate temperatures, the specific resistivity of the films, 2-3 x 10(-4) Omega cm, is comparable to values obtained with excimer lasers, whereas the resistivities obtained at room temperature are somewhat higher than those of films produced by excimer lasers. The transmission coefficient of visible light, about 0.9, is also comparable to values for films deposited by excimer lasers. The crystalline structure of films produced at 355 nm is similar to that of samples produced by these lasers.
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收藏
页码:147 / 152
页数:6
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