Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated n-Type Silicon

被引：23

作者：

Rougieux, F. E. ^{[1
]}

Forster, M. ^{[1
,2
,3
]}

Macdonald, D. ^{[1
]}

Cuevas, A. ^{[1
]}

Lim, B. ^{[4
]}

Schmidt, J. ^{[4
]}

机构：

[1] Australian Natl Univ, Res Sch Engn, Coll Engn & Comp Sci, Canberra, ACT 0200, Australia

[2] Apollon Solar, F-69002 Lyon, France

[3] INSA Lyon, INL, F-69621 Villeurbanne, France

[4] Inst Solar Energy Res Hamelin, D-31860 Emmerthal, Germany

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2011年 / 1卷 / 01期

基金：

澳大利亚研究理事会;

关键词：

Compensated; light-induced degradation; n-type; silicon; ELECTRONIC-PROPERTIES; CARRIER MOBILITY; DEPENDENCE; CENTERS;

D O I：

10.1109/JPHOTOV.2011.2165698

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, we present experimental data regarding the recombination activity and concentration of the boron-oxygen complex in compensated n-type silicon, doped with phosphorus and boron, when subjected to illumination. Unlike the data of Bothe et al. in n-type silicon compensated with thermal donors, our results suggest the dominant defect level in our doping range to be a shallow level (E-C-E-T = 0.15 eV), with a capture cross-section ratio sigma(n)/sigma(p) of around 0.006, suggesting a negatively charged center. We also confirm previous results showing an increasing defect density with bias light intensity. Due to the strong lifetime reduction observed, we suggest that this material might not be suited to make high-efficiency n-type solar cells, unless practical strategies to reduce the defect concentration can be developed.

引用

页码：54 / 58

页数：5

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