High-quality active inductors

被引：7

作者：

D'Angelo, G

Fanucci, L

Monorchio, A

Monterastelli, A

Neri, B

机构：

[1] Univ Pisa, Dipartimento Ingn Informazione, I-56125 Pisa, Italy

[2] Natl Res Council, CSMDR, I-56126 Pisa, Italy

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 20期

关键词：

D O I：

10.1049/el:19991199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-quality active integrated inductor is presented. The circuit has an inductance of 20nH and a quality factor of 47 at 1.8GHz. It is designed to be realised using standard silicon bipolar technology and consumes 2.6mW at a supply voltage of 3V.

引用

页码：1727 / 1728

页数：2

共 6 条

[1] Multilevel-spiral inductors using VLSI interconnect technology [J].

Burghartz, JN ;

Jenkins, KA ;

Soyuer, M .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (09) :428-430

[2]

DANGELO G, 1999, IEEE AP S S USNC URS

[3]

KOUTSOYANNOPOUL.Y, 1999, P IEEE INT S CIRC SY, V2, P61

[4] Q-enhanced LC bandpass filters for integrated wireless applications [J].

Kuhn, WB ;

Yanduru, NK ;

Wyszynski, AS .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (12) :2577-2586

[5] Reducing the substrate losses of RF integrated inductors [J].

Mernyei, F ;

Darrer, F ;

Pardoen, M ;

Sibrai, A .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1998, 8 (09) :300-301

[6] VHF CMOS integrated active inductor [J].

Thanachayanont, A ;

Payne, A .

ELECTRONICS LETTERS, 1996, 32 (11) :999-1000

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