Structural and electrical properties of co-evaporated Cu(In,Ga)Se2 thin films with varied Cu contents

被引：4

作者：

Kim, Min Young ^{[1
]}

Kim, Girim ^{[1
]}

Kim, Jongwan ^{[1
]}

Park, Jae Hwan ^{[1
]}

Lim, Donggun ^{[1
]}

机构：

[1] Korea Natl Univ Transportat, Dept Elect Engn, Chungju 380702, Chungbuk, South Korea

来源：

THIN SOLID FILMS | 2013年 / 546卷

关键词：

CIGS thin film solar cell; Co-evaporation; Three stage process; Cu content; SELENIZATION; PRECURSOR; VACUUM;

D O I：

10.1016/j.tsf.2013.05.033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu(In,Ga)Se-2 (CIGS) thin films were fabricated with varying Cu contents. Cu/(Ga + In) ratios were varied between 0.4 and 1.02. Solar cells were then fabricated by co-evaporation using the CIGS layers as absorbers. The influences of Cu content on the cells' structural, optical and electrical properties were studied. The CIGS thin films were characterized by X-ray diffractometer, scanning electron microscopy, energy-dispersive spectroscopy, four-point probe measurement and Hall measurement. Grain size in the films increased with increasing Cu content. At a Cu/(Ga + In) ratio of 0.86, the (220/204) peak was stronger than the (112) peak and carrier concentration was 1.49 x 10(16) cm(-3). Optimizing the Cu content resulted in a CIGS solar cell with an efficiency of 16.5%. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：308 / 311

页数：4

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