A Ka-band Asymmetrical Stacked-FET MMIC Doherty Power Amplifier

被引：0

作者：

Nguyen, Duy P. ^{[1
]}

Thanh Pham ^{[1
]}

Anh-Vu Pham ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

来源：

2017 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2017年

关键词：

Doherty Power Amplifier; Stacked-FET; Asymmetrical; Ka-band; Gallium Arsenide; MMIC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a stacked-FET monolithic millimeter-wave (mmW) integrated circuit Doherty power amplifier (DPA). The DPA employs a novel asymmetrical stack gate bias to achieve high power and high efficiency at 6-dB power back-off (PBO). The circuit is fabricated in a 0.15-mu m enhancement mode (E-mode) Gallium Arsenide (GaAs) process. Experimental results demonstrate output power at 1-dB gain compression (P-1dB) of 28.2 dBm, peak power added efficiency (PAE) of 37% and PAE at 6-dB PBO of 27% at 28 GHz. Measured small signal gain is 15 dB while the 3-dB bandwidth covers from 25.5 to 29.5 GHz. Using digital predistortion (DPD) with a 20 MHz 64 QAM modulated signal, an adjacent channel power ratio (ACPR) of -46 dBc has been observed.

引用

页码：398 / 401

页数：4

共 11 条

[1] Active Millimeter-Wave Phase-Shift Doherty Power Amplifier in 45-nm SOI CMOS [J].

Agah, Amir ;

Dabag, Hayg-Taniel ;

Hanafi, Bassel ;

Asbeck, Peter M. ;

Buckwalter, James F. ;

Larson, Lawrence E. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (10) :2338-2350

[2]

Cha J, 2003, IEEE MTT S INT MICR, P81, DOI 10.1109/MWSYM.2003.1210888

[3]

Colantonio P, 2009, 2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), P25

[4]

Curtis J, 2013, IEEE RAD FREQ INTEGR, P349

[5] Power Efficiency and Linearity Enhancement Using Optimized Asymmetrical Doherty Power Amplifiers [J].

Kim, Jangheon ;

Fehri, Bilel ;

Boumaiza, Slim ;

Wood, John .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2011, 59 (02) :425-434

[6]

Nguyen D.H., 2016, International Journal of Management Reviews, P1, DOI DOI 10.1111/IJMR.12129

[7] An Ultra Compact Watt-Level Ka-Band Stacked-FET Power Amplifier [J].

Nguyen, Duy P. ;

Anh-Vu Pham .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2016, 26 (07) :516-518

[8] K-Band GaAs MMIC Doherty Power Amplifier for Microwave Radio With Optimized Driver [J].

Quaglia, Roberto ;

Camarchia, Vittorio ;

Jiang, Tao ;

Pirola, Marco ;

Guerrieri, Simona Donati ;

Loran, Brian .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2014, 62 (11) :2518-2525

[9]

Tkachenko Y., 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369), P127, DOI 10.1109/GAAS.1999.803742

[10] A 38-46 GHz MMIC doherty power amplifier using post-distortion linearization [J].

Tsai, Jeng-Han ;

Huang, Tian-Wei .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (05) :388-390

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