High Performance AlGaN/GaN Schottky Barrier Diodes with Floating Gate

被引：0

作者：

Zhou, Zhiqingg ^{[1
]}

Liu, Meihua ^{[1
]}

Lin, Xinnan ^{[1
]}

机构：

[1] Peking Univ, Shenzhen Key Lab Adv Electron Device & Integrat E, Shenzhen Grad Sch, Shenzhen, Peoples R China

来源：

2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE) | 2019年

关键词：

AlGaN/GaN; sehottky barrier diodes; floating gate;

D O I：

10.1109/isne.2019.8896374

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report a high performance AlGaN/GaN Schottky barrier diodes (SBDs) with floating gate. We design a GaN SBDs with floating gate on Si substrate, fabricated in a 6-inch wafer process line. Compared with normal SBDs, the SBDs with floating gate presented almost 13% smaller turn-on voltage (V-ON); also, the floating gate cut down reverse current by 25%. This device structure can be widely used for GaN power devices on a large-size silicon substrate.

引用

页数：2

共 50 条

[1] GaN/AlGaN Lateral Schottky Barrier Diodes for High Frequency Applications
Cywinski, Grzegorz
Szkudlarek, Krzesimir
Yahniuk, Ivan
Yatsunenko, Sergey
Kruszewski, Piotr
Muziol, Grzegorz
Skierbiszewski, Czeslaw
Knap, Wojciech
Rumyantsev, S.
But, Dmytro
Knap, Wojciech
2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON), 2016,
[2] Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes
张涛
李若晗
苏凯
苏华科
吕跃广
许晟瑞
张进成
郝跃
Chinese Physics B, 2023, 32 (08) : 471 - 475
[3] Proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes
Zhang, Tao
Li, Ruo-Han
Su, Kai
Su, Hua-Ke
Lv, Yue-Guang
Xu, Sheng-Rui
Zhang, Jin-Cheng
Hao, Yue
CHINESE PHYSICS B, 2023, 32 (08)
[4] Study of High Efficiency Thin Barrier AlGaN/GaN Schottky Barrier Diodes and Rectifiers
Wang, Ce
Lu, Ping
Cheng, Fei
Huang, Kama
PROCEEDINGS OF 2024 IEEE WIRELESS POWER TECHNOLOGY CONFERENCE AND EXPO, WPTCE, 2024, : 437 - 440
[5] Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)
Ahn, Woojin
Seok, Ogyun
Ha, Min-Woo
Kim, Young-Shil
Han, Min-Koo
WIDE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 14, 2013, 53 (02): : 171 - 176
[6] Design Guidelines and Performance Tradeoffs in Recessed AlGaN/GaN Schottky Barrier Diodes
Soni, Ankit
Amogh, K. M.
Shrivastava, Mayank
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (11) : 4834 - 4841
[7] High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes
Osvald, J.
Lalinsky, T.
Vanko, G.
APPLIED SURFACE SCIENCE, 2018, 461 : 206 - 211
[8] AlGaN/GaN Heterostructure Schottky Barrier Diodes with Graded Barrier Layer
Liu, Honghui
Liang, Zhiwen
Yan, Chaokun
Liu, Yuebo
Wang, Fengge
Xu, Yanyan
Shen, Junyu
Xiao, Zhengwen
Wu, Zhisheng
Liu, Yang
Wang, Qi
Wang, Xinqiang
Zhang, Baijun
ADVANCES IN CONDENSED MATTER PHYSICS, 2022, 2022
[9] High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer
Lee, Geng-Yen
Liu, Hsueh-Hsing
Chyi, Jen-Inn
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (11) : 1519 - 1521
[10] AlGaN/GaN Diodes with Ni Schottky Barrier and Recessed Anodes
Ivan, Fedin, V
Evgeny, Erofeev, V
Valeria, Fedina V.
2019 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON), 2019,

← 1 2 3 4 5 →