Theoretical and experimental studies of (In,Ga)As/GaP quantum dots

被引：4

作者：

Robert, Cedric ^{[1
,2
]}

Tra Nguyen Thanh ^{[1
,2
]}

Cornet, Charles ^{[1
,2
]}

Turban, Pascal ^{[3
]}

Perrin, Mathieu ^{[1
,2
]}

Balocchi, Andrea ^{[4
]}

Folliot, Herve ^{[1
,2
]}

Bertru, Nicolas ^{[1
,2
]}

Pedesseau, Laurent ^{[1
,2
]}

Nestoklon, Mikhail O. ^{[5
]}

Even, Jacky ^{[1
,2
]}

Jancu, Jean-Marc ^{[1
,2
]}

Tricot, Sylvain ^{[3
]}

Durand, Olivier ^{[1
,2
]}

Marie, Xavier ^{[4
]}

Le Corre, Alain ^{[1
,2
]}

机构：

[1] Univ Europeenne Bretagne, INSA Rennes, Bretagne, France

[2] CNRS, UMR Foton Ohm 6082, F-35708 Rennes, France

[3] Univ Rennes 1, UMR CNRS 6251 UR1, Inst Phys Rennes, Equipe Phys Surfaces & Interfaces, F-35042 Rennes, France

[4] Univ Toulouse, LPCNO, INSA CNRS UPS, F-31077 Toulouse, France

[5] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

关键词：

Quantum dots; Tight-binding; k.p simulation; Time-resolved photoluminescence; LASERS; SEMICONDUCTORS;

D O I：

10.1186/1556-276X-7-643

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k center dot p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.

引用

页码：1 / 5

页数：5

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