Strain-Driven Stacking Faults in CdSe/CdS Core/Shell Nanorods

被引:33
作者
Demortiere, Arnaud [1 ,2 ,3 ]
Leonard, Donovan N. [4 ]
Petkov, Valeri [5 ]
Chapman, Karena [6 ]
Chattopadhyay, Soma [6 ]
She, Chunxing [1 ]
Cullen, David A. [4 ]
Shibata, Tomohiro [6 ]
Pelton, Matthew [1 ,7 ]
Shevchenko, Elena V. [1 ]
机构
[1] Argonne Natl Lab, Ctr Nanoscale Mat, 9700 South Cass Ave, Argonne, IL 60439 USA
[2] Univ Picardie Jules Verne, LRCS, CNRS, UMR 7314, F-80039 Amiens, France
[3] Reseau Stockage Electrochim Energie RS2E, CNRS, FR 3459, F-80039 Amiens, France
[4] Oak Ridge Natl Lab, Mat Sci & Technol Div, 1 Bethel Valley Rd, Oak Ridge, TN 37831 USA
[5] Cent Michigan Univ, Dept Phys, Mt Pleasant, MI 48859 USA
[6] Argonne Natl Lab, Adv Photon Source, 9700 South Cass Ave, Argonne, IL 60439 USA
[7] UMBC, Dept Phys, Baltimore, MD 21250 USA
关键词
QUANTUM DOTS; SEMICONDUCTOR NANOCRYSTALS; GROWTH; PHOTOLUMINESCENCE; NANOSTRUCTURES; SHAPE; STEM;
D O I
10.1021/acs.jpclett.8b00914
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Colloidal semiconductor nanocrystals are commonly grown with a shell of a second semiconductor material to obtain desired physical properties, such as increased photoluminescence quantum yield. However, the growth of a lattice-mismatched shell results in strain within the nano crystal, and this strain has the potential to produce crystalline defects. Here, we study CdSe/CdS core/shell nanorods as a model system to investigate the influence of core size and shape on the formation of stacking faults in the nanocrystal. Using a combination of high-angle annular dark-field scanning transmission electron microscopy and pair-distribution-function analysis of synchrotron X-ray scattering, we show that growth of the CdS shell on smaller, spherical CdSe cores results in relatively small strain and few stacking faults. By contrast, growth of the shell on larger, prolate spheroidal cores leads to significant strain in the CdS lattice, resulting in a high density of stacking faults.
引用
收藏
页码:1900 / 1906
页数:13
相关论文
共 36 条
[1]  
[Anonymous], 2009, Properties of Semiconductor Alloys: Group-Iv, Iii-V and Ii-Vi Semiconductors
[2]   Direct Determination of Polarity, Faceting, and Core Location in Colloidal Core/Shell Wurtzite Semiconductor Nanocrystals [J].
Bertoni, Giovanni ;
Grillo, Vincenzo ;
Brescia, Rosaria ;
Ke, Xiaoxing ;
Bals, Sara ;
Catellani, Alessandra ;
Li, Hongbo ;
Manna, Liberato .
ACS NANO, 2012, 6 (07) :6453-6461
[3]  
Chen O, 2013, NAT MATER, V12, P445, DOI [10.1038/nmat3539, 10.1038/NMAT3539]
[4]   Coherency strain effects on the optical response of core/shell heteronanostructures [J].
Chen, XB ;
Lou, YB ;
Samia, AC ;
Burda, C .
NANO LETTERS, 2003, 3 (06) :799-803
[5]   Practical and Reproducible Mapping of Strains in Si Devices Using Geometric Phase Analysis of Annular Dark-Field Images From Scanning Transmission Electron Microscopy [J].
Chung, Jayhoon ;
Lian, Guoda ;
Rabenberg, Lew .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (08) :854-856
[6]   CdSe/CdS/ZnS Double Shell Nanorods with High Photoluminescence Efficiency and Their Exploitation As Biolabeling Probes [J].
Deka, Sasanka ;
Quarta, Alessandra ;
Lupo, Maria Grazia ;
Falqui, Andrea ;
Boninelli, Silmona ;
Giannini, Cinzia ;
Morello, Giovanni ;
De Giorgi, Milena ;
Lanzani, Guglielmo ;
Spinella, Corrado ;
Cingolani, Roberto ;
Pellegrino, Teresa ;
Manna, Liberato .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (08) :2948-2958
[7]   Formation, ripening, and stability of epitaxially strained island arrays [J].
Eisenberg, HR ;
Kandel, D .
PHYSICAL REVIEW B, 2005, 71 (11)
[8]   PDFfit2 and PDFgui: computer programs for studying nanostructure in crystals [J].
Farrow, C. L. ;
Juhas, P. ;
Liu, J. W. ;
Bryndin, D. ;
Bozin, E. S. ;
Bloch, J. ;
Proffen, Th ;
Billinge, S. J. L. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (33)
[9]   Influence of strain on semiconductor thin film epitaxy [J].
Fitzgerald, EA ;
Samavedam, SB ;
Xie, YH ;
Giovane, LM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03) :1048-1056
[10]  
Ghosh ChaudhuriR., 2012, Chem. Rev, V112, P2373, DOI DOI 10.1021/CR100449N