Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs

被引：21
|
作者：
Khan, FA
Kumar, V
Adesida, I
机构：
[1] Dept. of Elec. and Comp. Eng., Microelectronics Laboratory, University of Illinois, Urbana-Champaign
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 02期
关键词：
D O I：
10.1149/1.1430363
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The effect of damage induced by Ar+ ion bombardment on two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) structure at different bias voltages using an inductively coupled plasma system was studied. The samples were measured before and after etching with respect to mobility and sheet carrier concentration. The value of the bias voltage significantly affected the plasma-induced damage on two-dimensional electron gas properties. However, plasma-induced damage could be easily annealed out by rapid thermal annealing the samples for just 5 s at 500degreesC. (C) 2001 The Electrochemical Society.
引用
收藏
页码：G8 / G9
页数：2
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