Controlling the strain and light emission from Si-Si1-xGex quantum dots

被引：2

作者：

Tang, YS ^{[1
]}

Hicks, SE ^{[1
]}

Ni, WX ^{[1
]}

Torres, CMS ^{[1
]}

Hansson, GV ^{[1
]}

Wilkinson, CDW ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN

来源：

THIN SOLID FILMS | 1997年 / 294卷 / 1-2期

基金：

英国工程与自然科学研究理事会;

关键词：

strain; light emission; silicon; germanium; quantum dots;

D O I：

10.1016/S0040-6090(96)09262-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports our recent results on a new method for controlling the internal strain and Light emission in Si-Si1-xGex quantum dots (QD) by coating a special SiNx layer with controlled built-in stress. It was found that by changing the stress in the coating layer, a systematic change of photoluminescence intensity and peak position has been observed. An optimum experimental regime was found where improved light emission remains after the SiNx coating, This provides a general way of preparing a stable dielectric film suitable for and controlling the internal strain in the QD diodes and other structures.

引用

页码：304 / 307

页数：4

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