Controlling the strain and light emission from Si-Si1-xGex quantum dots

被引：2
|
作者：
Tang, YS [1 ]
Hicks, SE [1 ]
Ni, WX [1 ]
Torres, CMS [1 ]
Hansson, GV [1 ]
Wilkinson, CDW [1 ]
机构：
[1] LINKOPING UNIV,DEPT PHYS,S-58183 LINKOPING,SWEDEN
来源：
THIN SOLID FILMS | 1997年 / 294卷 / 1-2期
基金：
英国工程与自然科学研究理事会;
关键词：
strain; light emission; silicon; germanium; quantum dots;
D O I：
10.1016/S0040-6090(96)09262-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper reports our recent results on a new method for controlling the internal strain and Light emission in Si-Si1-xGex quantum dots (QD) by coating a special SiNx layer with controlled built-in stress. It was found that by changing the stress in the coating layer, a systematic change of photoluminescence intensity and peak position has been observed. An optimum experimental regime was found where improved light emission remains after the SiNx coating, This provides a general way of preparing a stable dielectric film suitable for and controlling the internal strain in the QD diodes and other structures.
引用
收藏
页码：304 / 307
页数：4
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