THE STRUCTURAL AND ELECTRONIC PROPERTIES OF BNxAs1-x ALLOYS

被引:0
作者
Mohammad, Rezek [2 ]
Katircioglu, Senay [1 ]
机构
[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey
[2] Palestine Tech Univ, Appl Sci Coll, W Bank, Israel
关键词
BAs; BN; BNxAs1-x; DFT; structural properties; electronic properties; BORON-COMPOUNDS BP; GROUND-STATE; ELASTIC-CONSTANTS; BAND-STRUCTURE; AB-INITIO; CUBIC BN; BAS; NITRIDE; PRESSURE; CRYSTALS;
D O I
10.1142/S0218625X12500539
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structural and electronic properties of BNxAs1-x alloys have been investigated in the total range of nitrogen by the FP-LAPW method based on DFT within the EV-PW-GGA scheme. The equilibrium lattice constants, bulk moduli, first-order pressure derivatives of the bulk moduli, and cohesive energies have been obtained by total energy calculations of the alloys after both volume and geometry optimizations. The large bowing parameters found for the lattice constants and bulk moduli have demonstrated that the validity of Vegard's linear rule in the definitions of these structural features of the BNxAs1-x alloys is broken. The energy bands and the effective masses of the alloys have been calculated as a function of nitrogen concentration. The large bowing displayed by the variation of the energy gaps has indicated the band gap engineering capacity of the BNxAs1-x alloys and again in deviations from Vegard's linear rule. The effective electron masses calculated either at the edges of the conduction bands or along the directions approaching the edges of the conduction bands are all found to be small with respect to the effective electron masses in the BAs and BN compounds calculated at the Delta(min) and X points, respectively.
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共 46 条
  • [1] Resonant soft-x-ray emission study in relation to the band structure of cBN
    Agui, A
    Shin, S
    Fujisawa, M
    Tezuka, Y
    Ishii, T
    Muramatsu, Y
    Mishima, O
    Era, K
    [J]. PHYSICAL REVIEW B, 1997, 55 (04): : 2073 - 2078
  • [2] Ab initio study of structural and electronic properties of III-arsenide binary compounds
    Ahmed, Rashid
    Javad Hashemifar, S.
    Akbarzadeh, Hadi
    Ahmed, MaIsood
    Fazal-e-Aleem
    [J]. COMPUTATIONAL MATERIALS SCIENCE, 2007, 39 (03) : 580 - 586
  • [3] Structural phase transition of boron nitride compound
    Al-Douri, Y
    [J]. SOLID STATE COMMUNICATIONS, 2004, 132 (07) : 465 - 470
  • [4] On the importance of the band gap bowing in Boron-based III-V ternary alloys
    Azzi, S.
    Zaoui, A.
    Ferhat, M.
    [J]. SOLID STATE COMMUNICATIONS, 2007, 144 (5-6) : 245 - 248
  • [5] OPTICAL BOWING IN ZINC CHALCOGENIDE SEMICONDUCTOR ALLOYS
    BERNARD, JE
    ZUNGER, A
    [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5992 - 5995
  • [6] Blaha P., 2001, CALCULATING CRYST PR, V60
  • [7] Competition between the ionic and covalent character in the series of boron compounds BP, BAs, and BSb
    Bouhafs, B
    Aourag, H
    Ferhat, M
    Certier, M
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (30) : 5781 - 5796
  • [8] Trends in band-gap pressure coefficients in boron compounds BP, BAs, and BSb
    Bouhafs, B
    Aourag, H
    Certier, M
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (26) : 5655 - 5668
  • [9] CALCULATION OF THE GROUND-STATE PROPERTIES OF DIAMOND AND CUBIC BORON-NITRIDE
    BROSS, H
    BADER, R
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1995, 191 (02): : 369 - 385
  • [10] DIRECT TRANSFORMATION OF HEXAGONAL BORON NITRIDE TO DENSER FORMS
    BUNDY, FP
    WENTORF, RH
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (05) : 1144 - &