Micro force-moment sensor with six-degree of freedom

被引：8

作者：

Dao, DV ^{[1
]}

Toriyama, T ^{[1
]}

Wells, J ^{[1
]}

Sugiyama, S ^{[1
]}

机构：

[1] New Energy & Ind Technol Dev Org, Toshima Ku, Tokyo 1706028, Japan

来源：

MHS2001: PROCEEDINGS OF THE 2001 INTERNATIONAL SYMPOSIUM ON MICROMECHATRONICS AND HUMAN SCIENCE | 2001年

关键词：

D O I：

10.1109/MHS.2001.965228

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes the design concept, theoretical investigation and fabrication process of a micro multi-axis force-moment sensor utilizing the piezoresistive effect in silicon. The purpose of the sensor development is to measure the force and moment acting on boundary particles in a turbulent liquid flow. The sensor was designed to independently detect 3 components of force and 3 components of moment in three orthogonal directions. Conventional type and four-terminal piezoresistors have been combined in a single sensing chip.

引用

页码：93 / 98

页数：6

共 16 条

[1] A silicon force sensor for robotics and medicine [J].

Beebe, DJ ;

Hsieh, AS ;

Denton, DD ;

Radwin, RG .

SENSORS AND ACTUATORS A-PHYSICAL, 1995, 50 (1-2) :55-65

[2]

GRAHN RA, 2001, Patent No. 37065

[3]

JIANG F, 1997, P IEEE MEMS 97

[4] GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON-SHEAR COEFFICIENTS IN PLANE [J].

KANDA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (07) :1031-1033

[5]

KANG CG, 2001, SENSOR ACTUAT A-PHYS, V2876, P1

[6] An integrated MEMS three-dimensional tactile sensor with large force range [J].

Mei, T ;

Li, WJ ;

Ge, Y ;

Chen, Y ;

Ni, L ;

Chan, MH .

SENSORS AND ACTUATORS A-PHYSICAL, 2000, 80 (02) :155-162

[7]

MOTE WLC, 1998, SENSOR ACTUAT A-PHYS, V65, P88

[8]

OGATA, 1987, MEASURING TECHNOLOGY, V15

[9]

OKADA K, 1990, 9 SENS S, P245

[10] SEMICONDUCTING STRESS TRANSDUCERS UTILIZING TRANSVERSE AND SHEAR PIEZORESISTANCE EFFECTS [J].

PFANN, WG ;

THURSTON, RN .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2008-&

← 1 2 →