Transient reverse current phenomenon in a p-n heterojunction comprised of poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) and ZnO nanowall

被引：56

作者：

Maeng, Jongsun ^{[1
]}

Jo, Minseok ^{[1
]}

Kang, Seok-Ju ^{[1
]}

Kwon, Min-Ki ^{[1
]}

Jo, Gunho ^{[1
]}

Kim, Tae-Wook ^{[1
]}

Seo, Jaeduck ^{[1
]}

Hwang, Hyunsang ^{[1
]}

Kim, Dong-Yu ^{[1
]}

Park, Seong-Ju ^{[1
]}

Lee, Takhee ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2990225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the characteristics of a p-n heterojunction diode comprised of a poly (3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) as the hole-conducting p-type polymer and n-type ZnO nanowall networks. ZnO nanowall networks were synthesized on a GaN/sapphire substrate without metal catalyst using hot-wall type metal organic chemical vapor deposition. The p-n heterojunction diodes of PEDOT:PSS/ZnO nanowall exhibited a space charge limited current phenomena at forward bias and a transient reverse current recovery when a sudden reverse bias was applied from the forward bias condition. The minority carrier lifetime was estimated to be similar to 2.5 mu s. (C) 2008 American Institute of Physics.

引用

页数：3

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