Complementary Resistive Switching Behavior in Tetraindolyl Derivative-Based Memory Devices

被引：9
|
作者：
Sarkar, Surajit [1 ]
Rahman, Farhana Yasmin [1 ]
Banik, Hritinava [1 ]
Majumdar, Swapan [2 ]
Bhattacharjee, Debajyoti [1 ]
Hussain, Syed Arshad [1 ]
机构：
[1] Thin Film & Nanosci Lab, Dept Phys, Agartala 799022, Tripura, India
[2] Tripura Univ, Dept Chem, Agartala 799022, Tripura, India
来源：
LANGMUIR | 2022年 / 38卷 / 30期
关键词：
ABSORPTION; SEMICONDUCTORS; TRANSISTORS; TRANSITION; MECHANISMS; BREAKDOWN; BIPOLAR; POLYMER; OXYGEN; FIELD;
D O I：
10.1021/acs.langmuir.2c01011
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Complementary resistive switching (CRS) devices are more advantageous compared to bipolar resistive switching (BRS) devices for memory applications as they can minimize the sneak path problem observed in the case of BRS having a crossbar array structure. Here, we report the CRS behavior of 1,4-bis(di(1H-indol-3-yl)methyl)benzene (Indole1) molecules. Our earlier study revealed that Au/Indole1/Indium tin oxide (ITO) devices showed BRS under ambient conditions. However, the present investigations revealed that when the device is exposed to 353 K or higher temperatures, dynamic evolution of the Au/Indole1/ITO device from BRS to CRS occurred with a very good memory window (& SIM;10(3)), data retention (5.1 x 10(3) s), stability (50 days), and device yield (& SIM; 60%). This work explores the application possibility of indole derivatives toward future ultradense resistive random access memory.
引用
收藏
页码：9229 / 9238
页数：10
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