Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

被引：38

作者：

Hwang, David ^{[1
]}

Yonkee, Benjamin P. ^{[1
]}

Addin, Burhan Saif ^{[1
]}

Farrell, Robert M. ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

Speck, James S. ^{[1
]}

DenBaars, Steven ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 20期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; GALLIUM-NITRIDE; FABRICATION; EPITAXY; FILMS;

D O I：

10.1364/OE.24.022875

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of similar to 3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened). (C) 2016 Optical Society of America

引用

页码：22875 / 22880

页数：6

共 27 条

[1] Laser lift-off of AlN/sapphire for UV light-emitting diodes
Aoshima, Hiroki
Takeda, Kenichiro
Takehara, Kosuke
Ito, Shun
Mori, Mikiko
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
Amano, Hiroshi
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 753 - 756
[2] Bulk GaN based violet light-emitting diodes with high efficiency at very high current density
Cich, Michael J.
Aldaz, Rafael I.
Chakraborty, Arpan
David, Aurelien
Grundmann, Michael J.
Tyagi, Anurag
Zhang, Meng
Steranka, Frank M.
Krames, Michael R.
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (22)
[3] Surface-Roughened Light-Emitting Diodes: An Accurate Model
David, Aurelien
[J]. JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (05): : 301 - 316
[4] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
Fujii, T
Gao, Y
Sharma, R
Hu, EL
DenBaars, SP
Nakamura, S
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (06) : 855 - 857
[5] Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
Fujito, Kenji
Kubo, Shuichi
Fujimura, Isao
[J]. MRS BULLETIN, 2009, 34 (05) : 313 - 317
[6] Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching
Gao, Y
Fujii, T
Sharma, R
Fujito, K
Denbaars, SP
Nakamura, S
Hu, EL
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (5A): : L637 - L639
[7] Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride
Gao, Y
Craven, MD
Speck, JS
DenBaars, SP
Hu, EL
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (17) : 3322 - 3324
[8] Comparative study of etching high crystalline quality AlN and GaN
Guo, W.
Xie, J.
Akouala, C.
Mita, S.
Rice, A.
Tweedie, J.
Bryan, I.
Collazo, R.
Sitar, Z.
[J]. JOURNAL OF CRYSTAL GROWTH, 2013, 366 : 20 - 25
[9] Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
Holder, C. O.
Leonard, J. T.
Farrell, R. M.
Cohen, D. A.
Yonkee, B.
Speck, J. S.
DenBaars, S. P.
Nakamura, S.
Feezell, D. F.
[J]. APPLIED PHYSICS LETTERS, 2014, 105 (03)
[10] Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
Hurni, Christophe A.
David, Aurelien
Cich, Michael J.
Aldaz, Rafael I.
Ellis, Bryan
Huang, Kevin
Tyagi, Anurag
DeLille, Remi A.
Craven, Michael D.
Steranka, Frank M.
Krames, Michael R.
[J]. APPLIED PHYSICS LETTERS, 2015, 106 (03)

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