Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

被引：38

作者：

Hwang, David ^{[1
]}

Yonkee, Benjamin P. ^{[1
]}

Addin, Burhan Saif ^{[1
]}

Farrell, Robert M. ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

Speck, James S. ^{[1
]}

DenBaars, Steven ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 20期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; GALLIUM-NITRIDE; FABRICATION; EPITAXY; FILMS;

D O I：

10.1364/OE.24.022875

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of similar to 3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened). (C) 2016 Optical Society of America

引用

页码：22875 / 22880

页数：6

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