Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

被引：37

作者：

Tsai, Tsung-Ming ^{[1
]}

Chang, Kuan-Chang ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Syu, Yong-En ^{[3
]}

Liao, Kuo-Hsiao ^{[1
]}

Tseng, Bae-Heng ^{[1
]}

Sze, Simon M. ^{[2
,4
,5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[5] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

关键词：

FILM;

D O I：

10.1063/1.4750235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The tin-doped can supply conduction path to induce resistance switching behavior. However, the defect of tin-doped silicon oxide (Sn:SiOx) increased the extra leakage path lead to power consumption and joule heating degradation. In the study, supercritical CO2 fluids treatment was used to improve resistive switching property. The current conduction of high resistant state in post-treated Sn:SiOx film was transferred to Schottky emission from Frenkel-Poole due to the passivation effect. The molecular reaction model is proposed that the defect was passivated through dehydroxyl effect of supercritical fluid technology, verified by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750235]

引用

页数：4

共 17 条

[1] The Effect of Silicon Oxide Based RRAM with Tin Doping [J].

Chang, Kuan-Chang ;

Tsai, Tsung-Ming ;

Chang, Ting-Chang ;

Syu, Yong-En ;

Chuang, Siang-Lan ;

Li, Cheng-Hua ;

Gan, Der-Shin ;

Sze, Simon M. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 15 (03) :H65-H68

[2] Low-Temperature Synthesis of ZnO Nanotubes by Supercritical CO2 Fluid Treatment [J].

Chang, Kuan-Chang ;

Tsai, Tsung-Ming ;

Chang, Ting-Chang ;

Syu, Yong-En ;

Huang, Hui-Chun ;

Hung, Ya-Chi ;

Young, Tai-Fa ;

Gan, Der-Shin ;

Ho, New-Jin .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (09) :K47-K50

[3] Developments in nanocrystal memory [J].

Chang, Ting-Chang ;

Jian, Fu-Yen ;

Chen, Shih-Cheng ;

Tsai, Yu-Ting .

MATERIALS TODAY, 2011, 14 (12) :608-615

[4] Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment [J].

Chen, Min-Chen ;

Chang, Ting-Chang ;

Huang, Sheng-Yao ;

Chang, Kuan-Chang ;

Huang, Hui-Chun ;

Chen, Shih-Ching ;

Lu, Jin ;

Gan, Der-Shin ;

Ho, New-Jin ;

Young, Tai-Fa ;

Jhang, Geng-Wei ;

Tai, Ya-Hsiang .

SURFACE & COATINGS TECHNOLOGY, 2009, 204 (6-7) :1112-1115

[5] A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid [J].

Chen, Min-Chen ;

Chang, Ting-Chang ;

Huang, Sheng-Yao ;

Chang, Kuan-Chang ;

Li, Hung-Wei ;

Chen, Shih-Ching ;

Lu, Jin ;

Shi, Yi .

APPLIED PHYSICS LETTERS, 2009, 94 (16)

[6] Leakage current characteristics of laser-ablated SrBi2Nb2O9 thin films [J].

Das, RR ;

Bhattacharya, P ;

Pérez, W ;

Katiyar, RS ;

Bhalla, AS .

APPLIED PHYSICS LETTERS, 2002, 81 (05) :880-882

[7] Resistive Switching Properties of Au/ZrO2/Ag Structure for Low-Voltage Nonvolatile Memory Applications [J].

Li, Yingtao ;

Long, Shibing ;

Zhang, Manhong ;

Liu, Qi ;

Shao, Lubing ;

Zhang, Sen ;

Wang, Yan ;

Zuo, Qingyun ;

Liu, Su ;

Liu, Ming .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (02) :117-119

[8] Nanocrystalline ruthenium oxide embedded zirconium-doped hafnium oxide high-k nonvolatile memories [J].

Lin, Chen-Han ;

Kuo, Yue .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (02)

[9] Sol-gel synthesis and characterization of single-phase Ni ferrite nanoparticles dispersed in SiO2 matrix [J].

Nadeem, K. ;

Traussnig, T. ;

Letofsky-Papst, I. ;

Krenn, H. ;

Brossmann, U. ;

Wuerschum, R. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 493 (1-2) :385-390

[10] The Widom line as the crossover between liquid-like and gas-like behaviour in supercritical fluids [J].

Simeoni, G. G. ;

Bryk, T. ;

Gorelli, F. A. ;

Krisch, M. ;

Ruocco, G. ;

Santoro, M. ;

Scopigno, T. .

NATURE PHYSICS, 2010, 6 (07) :503-507

← 1 2 →