Chemical profiling of single nanotubes:: Intramolecular p-n-p junctions and on-tube single-electron transistors

被引：99
作者：
Kong, J [1 ]
Cao, J
Dai, HJ
Anderson, E
机构：
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期
关键词：
D O I：
10.1063/1.1431402
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electrical transport properties of intramolecular p-n-p junctions formed on individual semiconducting carbon nanotubes are reported. Chemical dopant "profiling" along the length of a nanotube divides the nanotube into two p-doped sections and a central n-doped section. The double p-n junctions formed on the nanotube dictate the electrical characteristics of the system. Well-defined and highly reproducible single-electron transistors with much smaller size than the geometrical length of the nanotube are obtained. (C) 2002 American Institute of Physics.
引用
收藏
页码：73 / 75
页数：3
相关论文
共 16 条
[1]   Electronic properties of mechanically induced kinks in single-walled carbon nanotubes [J].
Bozovic, D ;
Bockrath, M ;
Hafner, JH ;
Lieber, CM ;
Park, H ;
Tinkham, M .
APPLIED PHYSICS LETTERS, 2001, 78 (23) :3693-3695
[2]   Pure carbon nanoscale devices: Nanotube heterojunctions [J].
Chico, L ;
Crespi, VH ;
Benedict, LX ;
Louie, SG ;
Cohen, ML .
PHYSICAL REVIEW LETTERS, 1996, 76 (06) :971-974
[3]   Electronic and transport properties of N-P doped nanotubes [J].
Esfarjani, K ;
Farajian, AA ;
Hashi, Y ;
Kawazoe, Y .
APPLIED PHYSICS LETTERS, 1999, 74 (01) :79-81
[4]  
Grabert H., 1992, Single Charge Tunneling
[5]   Alkaline metal-doped n-type semiconducting nanotubes as quantum dots [J].
Kong, J ;
Zhou, CW ;
Yenilmez, E ;
Dai, HJ .
APPLIED PHYSICS LETTERS, 2000, 77 (24) :3977-3979
[6]   Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers [J].
Kong, J ;
Soh, HT ;
Cassell, AM ;
Quate, CF ;
Dai, HJ .
NATURE, 1998, 395 (6705) :878-881
[7]   Full and modulated chemical gating of individual carbon nanotubes by organic amine compounds [J].
Kong, J ;
Dai, HJ .
JOURNAL OF PHYSICAL CHEMISTRY B, 2001, 105 (15) :2890-2893
[8]   Negative differential resistance in nanotube devices [J].
Léonard, F ;
Tersoff, J .
PHYSICAL REVIEW LETTERS, 2000, 85 (22) :4767-4770
[9]   Novel length scales in nanotube devices [J].
Léonard, F ;
Tersoff, J .
PHYSICAL REVIEW LETTERS, 1999, 83 (24) :5174-5177
[10]   Electrical transport measurements on single-walled carbon nanotubes [J].
Nygård, J ;
Cobden, DH ;
Bockrath, M ;
McEuen, PL ;
Lindelof, PE .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (03) :297-304
12