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- [48] In situ observation of etching profile in inductively coupled plasma etching of GaAs and InP using long distance microscope JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (2A): : 426 - 427
- [49] In situ observation of etching profile in inductively coupled plasma etching of GaAs and InP using long distance microscope Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (2 A): : 426 - 427