In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic

被引:6
|
作者
Li, NY
Hsin, YM
Bi, WG
Asbeck, PM
Tu, CW
机构
[1] Dept. of Elec. and Comp. Engineering, Univ. of California at San Diego, San Diego
关键词
D O I
10.1063/1.119087
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the in situ chemical beam etching (CBET) process of (AI)GaAs using tris-dimethylaminoarsenic (TDMAAs) within a chemical beam epitaxy chamber. The optimal CBET condition of (Al)GaAs is established, according to the analysis of atomic force microscopy, capacitance-voltage carrier profiles, and current-voltage (I-V) measurements. This CBET process using TDMAAs is shown to provide a good etching selectivity (>20) of GaAs over AlxGa1-xAs (x greater than or equal to 0.35) with a very smooth etched surface at the nanometer scale and a clean etched/regrown interface for regrowth applications. Improved I-V characteristics of etched/regrown p-n AlxGa1-xAs (x less than or equal to 0.35) junctions is also successfully demonstrated when the GaAs cap layer is preferentially etched first by TDMAAs before regrowth of AlxGa1-xAs. (C) 1997 American Institute of Physics.
引用
收藏
页码:2589 / 2591
页数:3
相关论文
共 50 条
  • [21] Selective wet oxidation and selective wet etching of Al(Ga)As/GaAs and their use in device fabrication
    Kim, JH
    Lim, DH
    Kim, KS
    Yang, GM
    Lim, KY
    Lee, HJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 30 : S90 - S94
  • [22] HIGH-QUALITY ETCHED/REGROWN GAAS/GAAS INTERFACES FORMED BY AN ALL IN-SITU CL-2 ETCHING PROCESS
    MUI, DSL
    STRAND, TA
    THIBEAULT, BJ
    COLDREN, LA
    PETROFF, PM
    HU, EL
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 291 - 294
  • [23] DOPANT SELECTIVE PHOTOELECTROCHEMICAL ETCHING OF GAAS HOMOSTRUCTURES
    KHARE, R
    HU, EL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (05) : 1516 - 1519
  • [24] SELECTIVE DRY ETCHING OF GAAS/ALGAAS HETEROSTRUCTURE
    HIKOSAKA, K
    MIMURA, T
    JOSHIN, K
    ABE, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C101 - C101
  • [25] MEASUREMENT OF SELECTIVE GROWTH AND ETCHING RATES OF GAAS
    VASILEVA, LF
    SMIRNOV, AI
    SIDOROV, YG
    BILENKO, DI
    PETROSYAN, VI
    INORGANIC MATERIALS, 1976, 12 (02) : 162 - 164
  • [26] ANNEALING STUDIES OF AU/GAAS AND AL/GAAS INTERFACES USING A VARIABLE-ENERGY POSITRON BEAM
    LING, CC
    LEE, TC
    FUNG, S
    BELING, CD
    WENG, HM
    XU, JH
    SUN, SJ
    HAN, RD
    APPLIED SURFACE SCIENCE, 1995, 85 (1-4) : 305 - 310
  • [27] APPLICATION OF HREELS TO AL/GAAS AND AL/GAP INTERFACES
    DING, XM
    DONG, GS
    LU, XK
    XIAO, HY
    CHEN, P
    WANG, X
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 123 - 127
  • [28] Selective dry etching using inductively coupled plasmas Part I. GaAs AlGaAs and GaAs InGaP
    Hays, DC
    Cho, H
    Jung, KB
    Hahn, YB
    Abernathy, CR
    Pearton, SJ
    Ren, F
    Hobson, WS
    APPLIED SURFACE SCIENCE, 1999, 147 (1-4) : 125 - 133
  • [29] Selective lateral etching of Al0.3Ga0.7As/GaAs heterojunction structure
    Kim, Dong Hyun
    Lee, Hee Chul
    Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (3 A):
  • [30] Transferring of GaAs microtips using selective wet etching Al0.7Ga0.3As sacrificial layer
    Sun, Xiaojuan
    Hu, Lizhong
    Zhang, Hongzhi
    Tian, Yichun
    Liang, Xiuping
    Zhang, Heqiu
    Pan, Shi
    MICROELECTRONIC ENGINEERING, 2008, 85 (07) : 1481 - 1483