Deep ultraviolet photodetectors based on p-Si/i-SiC/n-Ga2O3 heterojunction by inserting thin SiC barrier layer

被引：23

作者：

An, Yuehua ^{[1
,2
]}

Zhi, Yusong ^{[1
,2
]}

Wu, Zhenping ^{[1
,2
]}

Cui, Wei ^{[1
,2
]}

Zhao, Xiaolong ^{[1
,2
]}

Guo, Daoyou ^{[2
]}

Li, Peigang ^{[1
,2
]}

Tang, Weihua ^{[1
,2
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Sci, Lab Optoelect Mat & Detectors, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2016年 / 122卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Photodetectors - Photons - Gallium compounds - Molecular beam epitaxy - Heterojunctions - Oxygen vacancies - Band diagram;

D O I：

10.1007/s00339-016-0576-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deep ultraviolet photodetectors based on p-Si/nGa(2)O(3) and p-Si/i-SiC/n-Ga2O3 heterojunctions were fabricated by laser molecular beam epitaxial (L-MBE), respectively. In compare with p-Si/n-Ga2O3 heterostructure- based photodetector, the dark current of p-Si/i-SiC/n-G(2)O(3) based photodetector decreased by three orders of magnitude, and the rectifying behavior was tuned from reverse to forward. In order to improve the quality of the photodetector, we reduced the oxygen vacancies of p-Si/iSiC/n-Ga2O3 heterostructures by changing the oxygen pressure during annealing. As a result, the rectification ratio (IF/IR) of the fabricated photodetectors was 36 at 4.5 V and the photosensitivity was 5.4 x 10(5) % under the 254 nm light illumination at -4.5 V. The energy band structure of p-Si/n-Ga2O3 and p-Si/i-SiC/n-Ga2O3 heterostructures was schematic drawn to explain the physic mechanism of enhancement of the performance of p-Si/iSiC/n-Ga2O3 heterostructure-based deep UV photodetector by introduction of SiC layer.

引用

页数：5

共 16 条

[1] Thickness Tuning Photoelectric Properties of β-Ga2O3 Thin Film Based Photodetectors [J].