A Scalable, Low Voltage, Low Cost SONOS Memory Technology For Embedded NVM Applications

被引：0

作者：

Ramkumar, K. ^{[1
]}

Kouznetsov, I. ^{[1
]}

Prabhakar, V. ^{[1
]}

Shakeri, K. ^{[1
]}

Yu, X. ^{[1
]}

Shih, P. C. ^{[2
]}

Huang, C. C. ^{[2
]}

Lee, H. C. ^{[2
]}

Wu, S. H. ^{[2
]}

Gau, J. H. ^{[2
]}

Yang, Y. ^{[1
]}

Hinh, L. ^{[1
]}

Lee, S. ^{[1
]}

Samanta, S. ^{[1
]}

Shih, H. M. ^{[1
]}

Geha, S. ^{[1
]}

Sheu, Y. K. ^{[1
,2
]}

机构：

[1] Cypress Semicond Inc, San Jose, CA 95134 USA

[2] United Microelect Corp, Tainan, Taiwan

来源：

2013 5TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2013年

关键词：

SONOS; embedded; NVM; Reliability;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A novel low cost, eNVM technology is presented which has the lowest program/erase voltage reported to date. It is based on the integration of a SONOS based NVM module into a foundry CMOS process with only 3 additional masks and no additional HV oxide. An optimized integration scheme ensures that the CMOS device parameters of the eNVM process are closely matched to baseline process. Even with the low 7.5V program/erase voltage, excellent reliability has been demonstrated meeting automotive data retention requirements and 100k cycle endurance on a 4.5Mbit flash memory macro.

引用

页码：199 / 202

页数：4

共 50 条

[41] Low voltage, scalable nanocrystal FLASH memory fabricated by templated self assembly
Guarini, KW
Black, CT
Zhang, Y
Babich, IV
Sikorski, EM
Gignac, LM
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 541 - 544
[42] Low-Power Embedded ReRAM Technology for IoT Applications
Ueki, M.
Takeuchi, K.
Yamamoto, T.
Tanabe, A.
Ikarashi, N.
Saitoh, M.
Nagumo, T.
Sunamura, H.
Narihiro, M.
Uejima, K.
Masuzaki, K.
Furutake, N.
Saito, S.
Yabe, Y.
Mitsuiki, A.
Takeda, K.
Hase, T.
Hayashi, Y.
2015 SYMPOSIUM ON VLSI TECHNOLOGY (VLSI TECHNOLOGY), 2015,
[43] Low-Power Embedded ReRAM Technology for IoT Applications
Ueki, M.
Takeuchi, K.
Yamamoto, T.
Tanabe, A.
Ikarashi, N.
Saitoh, M.
Nagumo, T.
Sunamura, H.
Narihiro, M.
Uejima, K.
Masuzaki, K.
Furutake, N.
Saito, S.
Yabe, Y.
Mitsuiki, A.
Takeda, K.
Hase, T.
Hayashi, Y.
2015 SYMPOSIUM ON VLSI CIRCUITS (VLSI CIRCUITS), 2015,
[44] Effect of Low-Temperature on Endurance Characteristics of SONOS Memory
Liu, Lijuan
Shen, Guofei
Cao, Gang
Zhang, Shunbin
Shi, Yanling
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 2013, 52 (01): : 959 - 964
[45] High voltage, low cost fets for HPA MMIC applications
不详
MICROWAVE JOURNAL, 2004, 47 (12) : 126 - +
[46] Low Cost Diode as Selector Device for Embedded Phase Change Memory in Advanced FD-SOI Technology
Fagot, J. J.
Boivin, P.
Della-Marca, V.
Postel-Pellerin, J.
Deleruyelle, D.
Weber, O.
Richard, E.
Arnaud, F.
2018 IEEE 10TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2018, : 89 - 92
[47] Chalcogenide selectors for low voltage and high density memory applications
Ambrosi, Elia
Wu, Cheng-Hsien
Kuo, Cheng-Chen
Hsu, Chen-Feng
Lee, Heng-Yuan
Lee, Tung-Ying
Bao, Xinyu
2024 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI TSA, 2024,
[48] Low cost embedded software
Anon
Electronic Product Design, 1994, 15 (09): : 53 - 54
[49] PCB Embedded Semiconductors for Low-Voltage Power Electronic Applications
Kearney, Daniel J.
Kicin, Slavo
Bianda, Enea
Krivda, Andrej
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2017, 7 (03): : 387 - 395
[50] A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications附视频
张君宇
王永
刘璟
张满红
许中广
霍宗亮
刘明
半导体学报, 2012, (08) : 67 - 70

← 1 2 3 4 5 →