Atomistic simulations of MeV ion irradiation of silica

被引：12

作者：

Backman, M. ^{[1
,2
,3
]}

Djurabekova, F. ^{[1
,2
]}

Pakarinen, O. H. ^{[1
,2
]}

Nordlund, K. ^{[1
,2
]}

Zhang, Y. ^{[3
,4
]}

Toulemonde, M. ^{[5
]}

Weber, W. J. ^{[3
,4
]}

机构：

[1] Univ Helsinki, Helsinki Inst Phys, FI-00014 Helsinki, Finland

[2] Univ Helsinki, Dept Phys, FI-00014 Helsinki, Finland

[3] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

[4] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

[5] Univ Caen, CIMAP CEA CNRS ENSICAEN, F-14070 Caen 5, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2013年 / 303卷

关键词：

Radiation damage; Molecular dynamics simulations; Inelastic thermal spike; MOLECULAR-DYNAMICS SIMULATION; TRACK; DAMAGE;

D O I：

10.1016/j.nimb.2012.10.020

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We used molecular dynamics simulations to study 2.3 MeV Au ion irradiation of silica. In this energy regime, the energy loss of the ion is divided almost equally between electronic and nuclear energy loss. The inelastic thermal spike model was used to model the electron-phonon interactions due to the high electronic energy loss. Binary collision approximation calculations provided input for the recoil energies due to MeV ions. We performed simulations of the damage due to the separate damage mechanisms as well as together, and found that the inelastic thermal spike is needed to accurately simulate the irradiation damage from MeV ions. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：129 / 132

页数：4