Charge density dependence of photoinduced stress in semiconductors

被引：3

作者：

Inui, N ^{[1
]}

机构：

[1] Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712280, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 3A期

关键词：

semiconductor; photoinduced stress; silicon; bipolar; free carriers;

D O I：

10.1143/JJAP.45.1675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An extension of a theory of photoinduced stress ill unipolar semiconductor is considered. To derive a relationship between the magnitude of photoinduced stress and carrier number densities correctly, electrons are clearly distinguished from holes in free carriers. The obtained correction term of photoinduced stress to the existing formula is proportional to electric charge density inside the semiconductor, and its coefficient is determined from the pressure coefficient of the valence band of the semiconductor. Using a corrected formula, numerical calculations of optical deformation for Si, Ge. and GaAs wafers are demonstrated.

引用

页码：1675 / 1679

页数：5

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