Annealing Effect on the Stability of Platinum Thin Films Covered by SiO2 or SiNx Layer

被引：0

作者：

Xiao, Li ^{[1
]}

Zhao, Zhan ^{[1
]}

Du, Lidong ^{[1
]}

Wu, Shaohua ^{[1
]}

Liu, Qimin ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Elect, State Key Lab Transducer Technol, Beijing, Peoples R China

来源：

2013 8TH ANNUAL IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (IEEE NEMS 2013) | 2013年

关键词：

component; Platinum; Annealing; Pressure sensor; Resistance;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

This study examined the crystal structure and the surface morphology between Pt and SiO2 or SiNx as a glue layer according to the annealing treatment. The thermal temperature make the surface morphology of the Pt films changed, and the characteristics of Pt thin film resistors under different annealing temperature also been changed. The resistance of the film will decrease after thermal treatment which the annealing temperature is lower than 480 degrees C, and the resistor will increase sharply after annealing above 500 degrees C. SiO2 or SiNx layers covered on Pt thin films also have an effect on the characteristics of Pt thin films.

引用

页码：352 / 355

页数：4

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