Annealing Effect on the Stability of Platinum Thin Films Covered by SiO2 or SiNx Layer

被引：0
|
作者：
Xiao, Li [1 ]
Zhao, Zhan [1 ]
Du, Lidong [1 ]
Wu, Shaohua [1 ]
Liu, Qimin [1 ]
机构：
[1] Chinese Acad Sci, Inst Elect, State Key Lab Transducer Technol, Beijing, Peoples R China
来源：
2013 8TH ANNUAL IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (IEEE NEMS 2013) | 2013年
关键词：
component; Platinum; Annealing; Pressure sensor; Resistance;
D O I：
暂无
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
This study examined the crystal structure and the surface morphology between Pt and SiO2 or SiNx as a glue layer according to the annealing treatment. The thermal temperature make the surface morphology of the Pt films changed, and the characteristics of Pt thin film resistors under different annealing temperature also been changed. The resistance of the film will decrease after thermal treatment which the annealing temperature is lower than 480 degrees C, and the resistor will increase sharply after annealing above 500 degrees C. SiO2 or SiNx layers covered on Pt thin films also have an effect on the characteristics of Pt thin films.
引用
收藏
页码：352 / 355
页数：4
相关论文
共 50 条
  • [21] Planarizing deposited SiO2 thin films using ISSG annealing technology
    Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
    不详
    不详
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2006, 27 (10): : 1785 - 1788
  • [22] SiNx:H/SiO2 double-layer passivation with hydrogen-radical annealing for solar cells
    Nagayoshi, H
    Ikeda, M
    Yamaguchi, M
    Uematsu, T
    Saitoh, T
    Kamisako, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9A): : 5688 - 5692
  • [23] Effect of SiO2 on Thermal Stability and Photocatalytic Activity of SiO2/TiO2 Films
    Deng, Xiangong
    Wang, Zhiyi
    Li, Faliang
    Zhang, Haijun
    Zhang, Shaowei
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2015, 7 (04) : 324 - 330
  • [24] Photoluminescence of Si/SiO2 and SiNx/SiO2 multilayers
    Institute of Solid State Physics, School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China
    不详
    Bandaoti Guangdian, 2007, 5 (680-684):
  • [25] Effect of rapid thermal annealing on the properties of PECVD SiNx thin films
    Karunagaran, B.
    Chung, S. J.
    Velumani, S.
    Suh, E.-K.
    MATERIALS CHEMISTRY AND PHYSICS, 2007, 106 (01) : 130 - 133
  • [26] Stability enhancement of LTPS TFTs using dual-layer SiO2/SiNx gate dielectrics
    Tsai, Po-Hao
    Chen, Hung-Tse
    Chen, Chi-Lin
    Huang, Shun-Fa
    IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005, 2005, : 487 - 489
  • [27] Thermal effect on microstructure vibration of SiO2 thin films
    Liu, Huasong
    Jiang, Yugang
    Liu, Dandan
    Li, Shida
    Yang, Xiao
    Ji, Yiqin
    Cui, Yuping
    VIBRATIONAL SPECTROSCOPY, 2018, 96 : 101 - 105
  • [28] Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity
    Chowdhury, Md Delwar Hossain
    Mativenga, Mallory
    Um, Jae Gwang
    Mruthyunjaya, Ravi K.
    Heiler, Gregory N.
    Tredwell, Timothy John
    Jang, Jin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (03) : 869 - 874
  • [29] Ellipsometric and XPS analysis of the interface between silver and SiO2, TiO2 and SiNx thin films
    Masetti, E
    Bulir, J
    Gagliardi, S
    Janicki, V
    Krasilnikova, A
    Di Santo, G
    Coluzza, C
    THIN SOLID FILMS, 2004, 455 : 468 - 472
  • [30] Plasma enhanced atomic layer deposition of SiNx:H and SiO2
    King, Sean W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2011, 29 (04):
12345