FEA Study of the Evolution of Wafer Warpage During Reflow Process in WLP

被引：0

作者：

Zhu, Chunsheng ^{[1
]}

Ning, Wenguo ^{[1
]}

Ye, Jiaotuo ^{[1
]}

Xu, Gaowei ^{[1
]}

Luo, Le ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Infonnat Technol, Shanghai 200050, Peoples R China

来源：

2012 13TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY & HIGH DENSITY PACKAGING (ICEPT-HDP 2012) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the evolution of wafer warpage during reflow process in wafer level packaging (WLP) is investigated by finite element analysis (FEA). The investigation focuses on three different fan-in WLP technologies: ball on polymer WLP without under bump metallurgy (UBM), ball on polymer WLP with thick UBM layer and encapsulated copper post WLP. Both wafer-level model and ball-level model are built and the results indicate that wafer warpage derived from ball-level model is compatible with wafer-level model. Ball on polymer WLP with thick UBM layer has the maximum warpage after reflow process. Reflow profiles with different cooling rate are also simulated.

引用

页码：660 / 664

页数：5