Rolled-up 1.55 μm Semiconductor Quantum Dot Tube Lasers

被引：0
作者：
Mi, Z. [1 ]
Bianucci, P. [1 ]
Tavakoli-Dastjerdi, M. H. [1 ]
Mukherjee, S. [1 ]
Djavid, M. [1 ]
Poole, P. J. [2 ]
机构：
[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada
[2] CNR, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源：
NANOSCALE LUMINESCENT MATERIALS 2 | 2012年 / 45卷 / 05期
基金：
加拿大自然科学与工程研究理事会;
关键词：
INGAAS/GAAS; MICROTUBES; EMISSION;
D O I：
10.1149/1.3700417
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We report on the fabrication and characterization of InGaAsP/InAs quantum dot rolled-up tubes as well as the achievement of a semiconductor tube laser at similar to 1.55 mu m. The optically pumped tube laser operates in continuous wave at liquid nitrogen temperature and shows an ultra-low threshold of similar to 1.26 mu W.
引用
收藏
页码：113 / 118
页数：6
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