Design and development of high performance 193nm positive resist based on functionalized poly(cyclicolefins)

被引：30

作者：

Varanasi, PR ^{[1
]}

Maniscalco, J ^{[1
]}

Mewherter, AM ^{[1
]}

Lawson, MC ^{[1
]}

Jordhamo, G ^{[1
]}

Allen, R ^{[1
]}

Opitz, J ^{[1
]}

Ito, H ^{[1
]}

Wallow, T ^{[1
]}

Hofer, D ^{[1
]}

Langsdorf, L ^{[1
]}

Jayaraman, S ^{[1
]}

Vicari, R ^{[1
]}

机构：

[1] IBM Microelect, Hopewell Junction, NY 12533 USA

来源：

MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷

关键词：

D O I：

10.1117/12.350251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

One of the major factors that seem to limit the development of practically useful 193nm resist materials has been their low reactive-ion-etch (IUE) resistance. In this paper, we have shown convincingly that the RIE stability of poly(cyclicolefins) is superior to that of the alternating copolymers such as poly(norbornene-anhydride), and poly(acrylates). We have also shown that a high performance 193nm resist can be developed from functionalized poly(norbornenes) using appropriate formulation and process optimizations.

引用

页码：51 / 63

页数：13

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