Design and development of high performance 193nm positive resist based on functionalized poly(cyclicolefins)

被引:30
作者
Varanasi, PR [1 ]
Maniscalco, J [1 ]
Mewherter, AM [1 ]
Lawson, MC [1 ]
Jordhamo, G [1 ]
Allen, R [1 ]
Opitz, J [1 ]
Ito, H [1 ]
Wallow, T [1 ]
Hofer, D [1 ]
Langsdorf, L [1 ]
Jayaraman, S [1 ]
Vicari, R [1 ]
机构
[1] IBM Microelect, Hopewell Junction, NY 12533 USA
来源
MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷
关键词
D O I
10.1117/12.350251
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
One of the major factors that seem to limit the development of practically useful 193nm resist materials has been their low reactive-ion-etch (IUE) resistance. In this paper, we have shown convincingly that the RIE stability of poly(cyclicolefins) is superior to that of the alternating copolymers such as poly(norbornene-anhydride), and poly(acrylates). We have also shown that a high performance 193nm resist can be developed from functionalized poly(norbornenes) using appropriate formulation and process optimizations.
引用
收藏
页码:51 / 63
页数:13
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