Undoped and Al-doped ZnO films with tuned properties grown by pulsed laser deposition

被引：74

作者：

Papadopoulou, E. L. ^{[1
,2
]}

Varda, M. ^{[3
]}

Kouroupls-Agalou, K. ^{[2
]}

Androulidaki, M. ^{[1
]}

Chikoidze, E. ^{[4
,5
]}

Galtier, P. ^{[4
,5
]}

Huyberechts, G. ^{[4
,5
]}

Aperathitis, E. ^{[1
]}

机构：

[1] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Iraklion 71110, Crete, Greece

[2] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Crete, Greece

[3] Univ Crete, Dept Phys, Iraklion 71003, Crete, Greece

[4] CNRS, GEMaC, F-92195 Meudon, France

[5] Umicore Grp Res & Dev, B-2250 Olen, Belgium

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 22期

关键词：

ZnO; XRD; PLD; Optical properties; Electrical properties;

D O I：

10.1016/j.tsf.2008.04.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of ZnO:Al (AZO) and pure ZnO have been grown by pulsed laser deposition (PLD) at a wide temperature range (200-500 degrees C) and at different partial oxygen pressures (5 x 10(-5) -5 x 10(-2) mbar). The films have been characterized structurally, optically and electrically. It is observed that the presence of aluminum in the ZnO films results in an enlargement of the optical band gap (similar to 3.8 eV) while the transmittance is increased in comparison to pure ZnO films, to approximately 85%. Furthermore. in the AZO films Occurs a lowering of the resistivity to the order of magnitude of 10(-4) Omega cm. Finally, a sharp emission excitonic peak centered at 353.5 run was observed for the highly conductive (3.3 x 10(-4) Omega cm) ZnO:Al films. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：8141 / 8145

页数：5

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