Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

被引：5
作者：
Barrigon, Enrique [1 ]
Brueckner, Sebastian [2 ,3 ]
Supplie, Oliver [2 ]
Kleinschmidt, Peter [2 ,4 ]
Rey-Stolle, Ignacio [1 ]
Hannappel, Thomas [2 ,3 ,4 ]
机构：
[1] Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain
[2] Helmholtz Zentrum Berlin, D-14109 Berlin, Germany
[3] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany
[4] CiS Forschungsinst Mikrosensor & Photovolta GmbH, D-99099 Erfurt, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 11期
关键词：
SCANNING-TUNNELING-MICROSCOPY; REFLECTANCE DIFFERENCE SPECTROSCOPY; ANISOTROPY SPECTROSCOPY; FILM GROWTH; GERMANIUM; KINETICS; ADSORPTION; DEPOSITION; SI(100); SI(001);
D O I：
10.1063/1.4798248
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Molecular hydrogen strongly interacts with vicinal Ge(100) surfaces during preparation in a metal organic vapor phase epitaxy reactor. According to X-ray photoemission spectroscopy and Fourier-transform infrared spectroscopy results, we identify two characteristic reflection anisotropy (RA) spectra for H-free and monohydride-terminated vicinal Ge(100) surfaces. RAS allows in situ monitoring of the surface termination and enables spectroscopic hydrogen kinetic desorption studies on the Ge(100) surface. Comparison of evaluated values for the activation energy and the pre-exponential factor of H desorption evaluated at different photon energies reflects that H unevenly affects the shape of the RA spectrum. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798248]
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页数：4
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