Optimising the growth of few-layer graphene on silicon carbide by nickel silicidation

被引：1

作者：

Escobedo-Cousin, Enrique ^{[1
]}

Vassilevski, Konstantin ^{[1
]}

Hopf, Toby ^{[1
]}

Wright, Nick ^{[1
]}

O'Neill, Anthony ^{[1
]}

Horsfall, Alton ^{[1
]}

Goss, Jonathan ^{[1
]}

Cumpson, Peter ^{[1
]}

机构：

[1] Newcastle Univ, Sch Elect & Elect Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

graphene; few-layer graphene; nickel silicide; Raman scattering; CARBON;

D O I：

10.4028/www.scientific.net/MSF.740-742.121

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Few-layers graphene (FLG) films were grown by local solid phase epitaxy on a semi-insulating 6H-SiC substrate by annealing Ni films deposited on the Si- and C-terminated faces of the SiC. X-ray photoelectron spectroscopy was used to verify the presence of graphene on the sample surface. The impact of the annealing process on the FLG final quality was studied by monitoring the peak position and intensity ratios of the Raman spectra. We also demonstrate that further device fabrication steps such as dielectric deposition can be carried out without compromising the FLG films integrity.

引用

页码：121 / 124

页数：4

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