Effect of gallium environment on infrared emission in Er3+-doped gallium-antimony-sulfur glasses

被引：15

作者：

Jiao, Qing ^{[1
,2
]}

Li, Ge ^{[1
]}

Li, Lini ^{[1
]}

Lin, Changgui ^{[1
,2
]}

Wang, Guoxiang ^{[1
,2
]}

Liu, Zijun ^{[1
,2
]}

Dai, Shixun ^{[1
,2
]}

Xu, Tiefeng ^{[1
,2
]}

Zhang, Qinyuan ^{[3
]}

机构：

[1] Ningbo Univ, Res Inst Adv Technol, Lab Infrared Mat & Devices, Ningbo 315211, Zhejiang, Peoples R China

[2] Key Lab Photoelect Detect Mat & Devices Zhejiang, Ningbo 315211, Zhejiang, Peoples R China

[3] South China Univ Technol, State Key Lab Luminescence Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

基金：

美国国家科学基金会;

关键词：

RAMAN-SPECTROSCOPIC ANALYSIS; OPTICAL AMPLIFICATION; CHALCOGENIDE GLASSES; MU-M; SULFIDE; SOLUBILITY; ABSORPTION; DY3+; IONS; ER3+;

D O I：

10.1038/srep41168

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Gallium-based Ga-Sb-S sulfide glasses was elaborated and studied. A relationship between the structure, composition, and optical properties of the glass has been established. The effects of the introduction of Ga on the structure using infrared and Raman spectroscopies and on the Er3+-doped IR emission have been discussed. The results show that incorporation of Ga induced the dissociation of [SbS3] pyramids units and the formation of tetrahedral [GaS4] units. The dissolved rare earth ions are separated around the Ga-S bonding and the infrared emission quenching are controlled. Moreover, continuous introduction of Er ions into the glass forms more Er-S bonds through the further aggregation surrounding the [GaS4] units. In return, the infrared emission intensity decreased with excessive Er ion addition. This phenomenon is correlated with the recurrence concentration quenching effect induced by the increase of [GaS4] units.

引用

页数：8

共 43 条

[31] Erbium implanted thin film photonic materials [J].