Effect of gallium environment on infrared emission in Er3+-doped gallium-antimony-sulfur glasses

被引：15

作者：

Jiao, Qing ^{[1
,2
]}

Li, Ge ^{[1
]}

Li, Lini ^{[1
]}

Lin, Changgui ^{[1
,2
]}

Wang, Guoxiang ^{[1
,2
]}

Liu, Zijun ^{[1
,2
]}

Dai, Shixun ^{[1
,2
]}

Xu, Tiefeng ^{[1
,2
]}

Zhang, Qinyuan ^{[3
]}

机构：

[1] Ningbo Univ, Res Inst Adv Technol, Lab Infrared Mat & Devices, Ningbo 315211, Zhejiang, Peoples R China

[2] Key Lab Photoelect Detect Mat & Devices Zhejiang, Ningbo 315211, Zhejiang, Peoples R China

[3] South China Univ Technol, State Key Lab Luminescence Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China

来源：

SCIENTIFIC REPORTS | 2017年 / 7卷

基金：

美国国家科学基金会;

关键词：

RAMAN-SPECTROSCOPIC ANALYSIS; OPTICAL AMPLIFICATION; CHALCOGENIDE GLASSES; MU-M; SULFIDE; SOLUBILITY; ABSORPTION; DY3+; IONS; ER3+;

D O I：

10.1038/srep41168

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Gallium-based Ga-Sb-S sulfide glasses was elaborated and studied. A relationship between the structure, composition, and optical properties of the glass has been established. The effects of the introduction of Ga on the structure using infrared and Raman spectroscopies and on the Er3+-doped IR emission have been discussed. The results show that incorporation of Ga induced the dissociation of [SbS3] pyramids units and the formation of tetrahedral [GaS4] units. The dissolved rare earth ions are separated around the Ga-S bonding and the infrared emission quenching are controlled. Moreover, continuous introduction of Er ions into the glass forms more Er-S bonds through the further aggregation surrounding the [GaS4] units. In return, the infrared emission intensity decreased with excessive Er ion addition. This phenomenon is correlated with the recurrence concentration quenching effect induced by the increase of [GaS4] units.

引用

页数：8

共 43 条

[11]

Higuchi H, 1999, PHYS CHEM GLASSES, V40, P122

[12] Mid-infrared emissions from Ho3+ in Ga2S3-GeS2-Sb2S3 glass [J].

Ichikawa, Manabu ;

Ishikawa, Yo-ichi ;

Wakasugi, Takashi ;

Kadono, Kohei .

JOURNAL OF LUMINESCENCE, 2012, 132 (03) :784-788

[13] Glass formation, physico-chemical properties, and structure of glasses based on Ga2S3-GeS2-Sb2S3 system [J].

Ichikawa, Manabu ;

Wakasugi, Takashi ;

Kadono, Kohei .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2010, 356 (43) :2235-2240

[14]

Ivanova ZG, 2005, J OPTOELECTRON ADV M, V7, P349

[15] Physicochemical, structural and fluorescence properties of Er-doped Ge-S-Ga glasses [J].

Ivanova, ZG ;

Vassilev, VS ;

Cernoskova, E ;

Cernosek, Z .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (01) :107-110

[16] RAMAN AND INFRARED SPECTROSCOPIC STUDIES OF GE-GA-AG SULFIDE GLASSES [J].

JULIEN, C ;

BARNIER, S ;

MASSOT, M ;

CHBANI, N ;

CAI, X ;

LOIREAULOZACH, AM ;

GUITTARD, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 22 (2-3) :191-200

[17] Structural Characterization and Compositional Dependence of Optical Properties of Ge16Se52Te32-x Sb x (x=0, 2, 4, 6, 8) Glassy Alloys [J].

Kaistha, Arpit ;

Modgil, Vivek ;

Rangra, V. S. .

JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (12) :4747-4753

[18] Preparation of high-purity Pr3+ doped Ge-As-Se-In-I glasses for active mid-infrared optics [J].

Karaksina, E. V. ;

Shiryaev, V. S. ;

Kotereva, T. V. ;

Velmuzhov, A. P. ;

Ketkova, L. A. ;

Snopatin, G. E. .

JOURNAL OF LUMINESCENCE, 2016, 177 :275-279

[19]

Kolimiets B., 1960, GLASSY STATE CHALCOG, P456

[20] Spatial distribution of rare-earth ions and GaS4 tetrahedra in chalcogenide glasses studied via laser spectroscopy and ab initio molecular dynamics simulation [J].

Lee, T. H. ;

Simdyankin, S. I. ;

Hegedus, J. ;

Heo, J. ;

Elliott, S. R. .

PHYSICAL REVIEW B, 2010, 81 (10)

← 1 2 3 4 5 →