Robust Methodology for Low-Frequency Noise Power Analyses in Advanced MOS Transistors

被引：2

作者：

van Brandt, Leopold ^{[1
]}

Esfeh, Babak Kazemi ^{[1
]}

Kilchytska, Valeriya ^{[1
]}

Flandre, Denis ^{[1
]}

机构：

[1] Catholic Univ Louvain, ICTEAM, Louvain La Neuve, Belgium

来源：

2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2019年

关键词：

MOSFETS; BIAS;

D O I：

10.1109/eurosoi-ulis45800.2019.9041859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a newmethodology to discriminate random telegraph noise (RTN) and flicker (1/f) noise components from set-up noise.We illustrate it for a strong RTN case (Delta I-D/I-D approximate to 30%) measured on a 26 nm gate length nMOS transistor. The approach is based on high-accuracy time-domain measurements. An iterative Schmitt trigger-like algorithm was developed to properly identify and model the RTN and 1/f noise. Statistical analysis allows to assess the accuracy of the extraction. The power spectral densities (PSD) of the different noise models accurately match the frequency measurements.

引用

页数：4

共 50 条

[21] Low-frequency noise in nanoscale ballistic transistors
Tersoff, J.
NANO LETTERS, 2007, 7 (01) : 194 - 198
[22] Low-frequency noise in junctionless multigate transistors
Jang, Doyoung
Lee, Jae Woo
Lee, Chi-Woo
Colinge, Jean-Pierre
Montes, Laurent
Lee, Jung Il
Kim, Gyu Tae
Ghibaudo, Gerard
APPLIED PHYSICS LETTERS, 2011, 98 (13)
[23] LOW-FREQUENCY NOISE IN PERMEABLE BASE TRANSISTORS
ZHU, XC
ZHANG, XN
VANDERZIEL, A
BOZLER, CO
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1408 - 1413
[24] LOW FREQUENCY NOISE IN MOS FIELD EFFECT TRANSISTORS
FLINN, I
BEW, G
BERZ, F
SOLID-STATE ELECTRONICS, 1967, 10 (08) : 833 - &
[25] An ASIC for the Measurement of Low Frequency Noise in MOS Transistors
Puyol, Rafael
Arnaud, Alfredo
Miguez, Matias
Gak, Joel
2014 IEEE INTERNATIONAL INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE (I2MTC) PROCEEDINGS, 2014, : 812 - 815
[26] Low Frequency Noise of MOS Transistors - 2.
Gentil, Pierre
1978, 58 (10): : 645 - 652
[27] TEMPERATURE-DEPENDENCE OF LOW-FREQUENCY NOISE IN N-CHANNEL MOS-TRANSISTORS
WONG, H
CHENG, YC
APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 493 - 499
[28] LOW-FREQUENCY EXCESS NOISE IN SOS MOS FETS
HSU, ST
RCA REVIEW, 1980, 41 (04): : 577 - 591
[29] Low-Frequency Noise in InGaAs-OI Transistors
Marquez, Carlos
Navarro, Carlos
Karg, Siegfried
Ortega, Ruben
Zota, Cezar
Gamiz, Francisco
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (06) : 3964 - 3969
[30] INVESTIGATION OF LOW-FREQUENCY NOISE OF BIPOLAR-TRANSISTORS
LUCHININ, AS
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOFIZIKA, 1990, 33 (05): : 624 - 631

← 1 2 3 4 5 →