Robust Methodology for Low-Frequency Noise Power Analyses in Advanced MOS Transistors

被引：2

作者：

van Brandt, Leopold ^{[1
]}

Esfeh, Babak Kazemi ^{[1
]}

Kilchytska, Valeriya ^{[1
]}

Flandre, Denis ^{[1
]}

机构：

[1] Catholic Univ Louvain, ICTEAM, Louvain La Neuve, Belgium

来源：

2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2019年

关键词：

MOSFETS; BIAS;

D O I：

10.1109/eurosoi-ulis45800.2019.9041859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a newmethodology to discriminate random telegraph noise (RTN) and flicker (1/f) noise components from set-up noise.We illustrate it for a strong RTN case (Delta I-D/I-D approximate to 30%) measured on a 26 nm gate length nMOS transistor. The approach is based on high-accuracy time-domain measurements. An iterative Schmitt trigger-like algorithm was developed to properly identify and model the RTN and 1/f noise. Statistical analysis allows to assess the accuracy of the extraction. The power spectral densities (PSD) of the different noise models accurately match the frequency measurements.

引用

页数：4

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