"White" emission of ZnO nanosheets with thermal annealing

被引:23
作者
Diaz Cano, A. I. [1 ]
El Filali, B. [1 ]
Torchynska, T. V. [2 ]
Casas Espinola, J. L. [2 ]
机构
[1] UPIITA Natl Polytech Inst, Mexico City 07738, DF, Mexico
[2] ESFM Natl Polytech Inst, Mexico City 07738, DF, Mexico
关键词
LUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE;
D O I
10.1016/j.physe.2013.01.017
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photoluminescence (PL), its temperature dependence, scanning electronic microscopy (SEM) and X ray diffraction (XRD) have been studied in thermal annealed crystalline ZnO nanosheets. ZnO nanosheets were created by the electrochemical (anodization) method using different technological regimes with the typical size of 50 nm x 100 nm. Then ZnO nanosheets were annealed at 400 degrees C for 2 h in ambient air. XRD study has shown that thermal annealing stimulated the Zn oxidation and ZnO crystallization with the creation of wurzite ZnO crystal lattice. The oxidation and crystallization processes in ZnO nanosheets are accompanied by the intensity increasing a set of PL bands with the peaks at 1.58, 1.98, 2.55, 2.94, 3.06 and 3.18 eV at 10 K. The reasons of emission transformation and the nature of optical transitions related to the studied PL bands have been discussed. It is shown that by the controllable way it is possible to obtain the wide spectral range for ZnO emission that is interesting for the room temperature "white" light-emitting diodes. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:24 / 28
页数:5
相关论文
共 27 条
  • [1] Fabrication and comparative optical characterization of n-ZnO nanostructures (nanowalls, nanorods, nanoflowers and nanotubes)/p-GaN white-light-emitting diodes
    Alvi, N. H.
    Ali, S. M. Usman
    Hussain, S.
    Nur, O.
    Willander, M.
    [J]. SCRIPTA MATERIALIA, 2011, 64 (08) : 697 - 700
  • [2] A low temperature combination method for the production of ZnO nanowires
    Cross, RBM
    De Souza, MM
    Narayanan, EMS
    [J]. NANOTECHNOLOGY, 2005, 16 (10) : 2188 - 2192
  • [3] ZnO nanostructures for optoelectronics: Material properties and device applications
    Djurisic, A. B.
    Ng, A. M. C.
    Chen, X. Y.
    [J]. PROGRESS IN QUANTUM ELECTRONICS, 2010, 34 (04) : 191 - 259
  • [4] Photoluminescence and electron paramagnetic resonance of ZnO tetrapod structure
    Djurisic, AB
    Choy, WCH
    Roy, VAL
    Leung, YH
    Kwong, CY
    Cheah, KW
    Rao, TKG
    Chan, WK
    Lui, HT
    Surya, C
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2004, 14 (09) : 856 - 864
  • [5] Scanning photoluminescence spectroscopy in InAs/InGaAs quantum-dot structures
    Dybiec, M
    Ostapenko, S
    Torchynska, TV
    Losada, EV
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (25) : 5165 - 5167
  • [6] Role of copper in the green luminescence from ZnO crystals
    Garces, NY
    Wang, L
    Bai, L
    Giles, NC
    Halliburton, LE
    Cantwell, G
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (04) : 622 - 624
  • [7] Studying the growth conditions, the alignment and structure of ZnO nanorods
    Grabowska, J
    Nanda, KK
    McGlynn, E
    Mosnier, JP
    Henry, MO
    [J]. SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4) : 1093 - 1096
  • [8] A novel gas sensor design based on CH4/H2/H2O plasma etched ZnO thin films
    Gruber, D
    Kraus, F
    Müller, J
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2003, 92 (1-2) : 81 - 89
  • [9] Room-temperature ultraviolet nanowire nanolasers
    Huang, MH
    Mao, S
    Feick, H
    Yan, HQ
    Wu, YY
    Kind, H
    Weber, E
    Russo, R
    Yang, PD
    [J]. SCIENCE, 2001, 292 (5523) : 1897 - 1899
  • [10] A 5% efficient photo electrochemical solar cell based on nanostructured ZnO electrodes
    Keis, K
    Magnusson, E
    Lindström, H
    Lindquist, SE
    Hagfeldt, A
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 73 (01) : 51 - 58