Improved Capacitance Model Involving Fringing Effects for Electret-Based Rotational Energy Harvesting Devices

被引:27
作者
Feng, Yue [1 ]
Shao, Bohan [1 ]
Tang, Xusong [1 ]
Han, Yanhui [1 ]
Wu, Tianzhun [2 ]
Suzuki, Yuji [3 ]
机构
[1] Beijing Inst Technol, Sch Mechatron Engn, Natl Key Lab Electromech Engn & Control, Beijing 100081, Peoples R China
[2] Chinese Acad Sci, Shenzhen Inst Adv Technol, Inst Biomed & Hlth Engn, Shenzhen 518035, Peoples R China
[3] Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan
基金
中国国家自然科学基金;
关键词
Capacitance modeling; electret-based electrostatic energy harvester; energy harvesting; fringing effect; GENERATOR;
D O I
10.1109/TED.2018.2803145
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electret-based rotational energy harvesting (EBREH) technology is promising to overcome the electrostatically converted power limitation of velocity-damped resonance generators. Its structural parameter-dominated capacitance variation and parasitic capacitance should be correctly evaluated for the optimal design of EBREH devices regarding the high power output implement. Basically, finite-element analysis (FEA) seems the only access to predict capacitances across the complicated interdigitated electrodes in 3-D space because of partially or completely neglected fringing effects in currently available theoretical models. In this paper, we proposed a more efficient model for the capacitance of EBREH devices based on four-positioned capacitors, i.e., coplanar, parallel-plate, flat-plate nonparallel, and sector coplanar capacitors. Distinctively differing from other models, our model takes 3-D fringing effects associatedwith fringing fields into account properly in each type of the capacitor. In addition, the accuracy of the proposedmodel wasmuch improved by combining parallel-wire capacitance theory and Schwarz-Christoffel mapping. Our model was verified through both the FEA and practical measurements with a fabricated EBREH structure. The measurement indicated that this novel capacitance model can be readily applicable to rotary and linear motion-driven EBREH devices and electrostatic sensors for further design optimizations with device parameters.
引用
收藏
页码:1597 / 1603
页数:7
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