Record Low-Power Organic RRAM With Sub-20-nA Reset Current

被引：31

作者：

Bai, Wenliang ^{[1
]}

Huang, Ru ^{[1
]}

Cai, Yimao ^{[1
]}

Tang, Yu ^{[1
]}

Zhang, Xing ^{[1
]}

Wang, Yangyuan ^{[1
]}

机构：

[1] Peking Univ, Key Lab Microelect Devices & Circuits, Inst Microelect, Beijing 100871, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

Double layer; low power; organic resistive random access memory (RRAM); parylene-C; single layer; MEMORY; DEVICES; DONOR; LAYER;

D O I：

10.1109/LED.2012.2231047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, organic resistive random access memory (RRAM) devices based on double-layer polychloro-paraxylylene (parylene-C) are fabricated, which show stable bipolar resistive switching behavior, excellent data retention, and high scalability. Moreover, extremely low reset current of sub-20 nA and set current of 0.15 mu A are obtained with adequate switching margin for the first time in the field of organic RRAM, almost 10(5) times lower than that of the single-layer parylene-C cells, exhibiting great potentials for future low-power applications. Possible mechanism for the ultralow operating current of double-layer device is discussed.

引用

收藏

页码：223 / 225

页数：3

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