Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN

被引：12

作者：

Zhou, Rui ^{[1
,2
]}

Feng, Meixin ^{[2
,3
]}

Wang, Jin ^{[2
,4
]}

Zhong, Yaozong ^{[1
,2
]}

Sun, Qian ^{[1
,2
,3
]}

Liu, Jianxun ^{[2
]}

Huang, Yingnan ^{[1
,2
]}

Zhou, Yu ^{[2
,3
]}

Gao, Hongwei ^{[2
,3
]}

Ikeda, Masao ^{[2
]}

Li, Zhiyun ^{[5
]}

Zhao, Yanfei ^{[5
]}

Liu, Tong ^{[5
]}

Yang, Hui ^{[1
,2
,5
]}

机构：

[1] Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[3] Chinese Acad Sci, Guangdong Foshan Branch, Suzhou Inst Nanotech & Nanobion, Foshan 528000, Peoples R China

[4] Univ Sci & Technol Beijing, Beijing 100083, Peoples R China

[5] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Vacuum Interconnected Nanotech Workstn, Suzhou 215123, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2020年 / 171卷

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

N-face n-GaN; Ohmic contact; Plasma treatment; XPS; Surface stoichiometry; DRY ETCH DAMAGE; RESISTANCE; REDUCTION; DIODES;

D O I：

10.1016/j.sse.2020.107863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports a systematic study about the effect of surface stoichiometry induced by inductively coupled plasma (ICP) etching on the ohmic contact to N-face n-GaN. It is found that N-face n-GaN surface has a very high activity towards oxygen adsorption. And it is indispensable to remove GaOx layer on the N-face n-GaN surface prior to the metal deposition to realize ohmic contact. Moreover, the radio frequency power of the ICP etching and the plasma species greatly affect the surface stoichiometry and the electrical property of the ohmic contact to N-face n-GaN. X-ray photoelectron spectroscopy was implemented to characterize the surface stoichiometry of N-face n-GaN after plasma treatment and reveal the mechanism behind the phenomena. As a result, a non-alloyed ohmic contact to N-face n-GaN has been successfully achieved in a reproducible way.

引用

页数：5

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