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High-performance solar-blind photodetector with graphene and nitrogen-doped reduced graphene oxide quantum dots (rGOQDs)
被引:7
|作者:
Zhang, Enliang
[1
,2
]
Sun, Tai
[2
]
Ge, Bangtong
[2
]
Zhang, Weiguo
[2
]
Gao, Xuan
[2
]
Jiang, Hao
[2
]
Li, Zhancheng
[2
]
Liu, Guojun
[1
]
Shen, Jun
[2
]
机构:
[1] Changchun Univ Sci & Technol, Sch OptoElect Engn, Changchun 130022, Jilin, Peoples R China
[2] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
基金:
中国国家自然科学基金;
关键词:
rGOQDs;
Graphene;
Photodetector;
UV;
Capping Layer;
ULTRAVIOLET;
RESPONSIVITY;
DETECTIVITY;
IMPROVEMENT;
EFFICIENCY;
PATHWAY;
D O I:
10.1166/mex.2018.1410
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Hybrid photodetector of graphene and reduced graphene oxide quantum dots (rGOQDs) is promising for deep-UV photodetection. However, these photodetectors are usually suffered from long response time and vacuum-required measurement environment. In this study, nitrogen-doped rGOQDs were synthesized by the improved Hummers method and DMF hydrothermal treatment approach, while DMF was used as a reducing reagent to enhance the photoresponse of rGOQDs. Hybrid photodetector with rGOQDs on graphene was fabricated using Al2O3, as capping layer. High photoresponsivity of 2.1 x 10(6) V/W and response time of 0.13 s were obtained at deep-UV under ambient environment, and enhanced photoresponse was observed in solar-blind wavelength compared to normal UV light. Furthermore, the integration of rGOQDs made a great improvement for graphene transistor characteristics, with a 5-fold mobility improvement and a shift of Dirac point of 50 V. This paper provide a feasible way for the fabrication of solar-blind photodetectors with high responsivity, fast response time and ambient condition performance, which are important for the community of photodetection.
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页码:105 / 111
页数:7
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