High-performance solar-blind photodetector with graphene and nitrogen-doped reduced graphene oxide quantum dots (rGOQDs)

被引:7
|
作者
Zhang, Enliang [1 ,2 ]
Sun, Tai [2 ]
Ge, Bangtong [2 ]
Zhang, Weiguo [2 ]
Gao, Xuan [2 ]
Jiang, Hao [2 ]
Li, Zhancheng [2 ]
Liu, Guojun [1 ]
Shen, Jun [2 ]
机构
[1] Changchun Univ Sci & Technol, Sch OptoElect Engn, Changchun 130022, Jilin, Peoples R China
[2] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
基金
中国国家自然科学基金;
关键词
rGOQDs; Graphene; Photodetector; UV; Capping Layer; ULTRAVIOLET; RESPONSIVITY; DETECTIVITY; IMPROVEMENT; EFFICIENCY; PATHWAY;
D O I
10.1166/mex.2018.1410
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Hybrid photodetector of graphene and reduced graphene oxide quantum dots (rGOQDs) is promising for deep-UV photodetection. However, these photodetectors are usually suffered from long response time and vacuum-required measurement environment. In this study, nitrogen-doped rGOQDs were synthesized by the improved Hummers method and DMF hydrothermal treatment approach, while DMF was used as a reducing reagent to enhance the photoresponse of rGOQDs. Hybrid photodetector with rGOQDs on graphene was fabricated using Al2O3, as capping layer. High photoresponsivity of 2.1 x 10(6) V/W and response time of 0.13 s were obtained at deep-UV under ambient environment, and enhanced photoresponse was observed in solar-blind wavelength compared to normal UV light. Furthermore, the integration of rGOQDs made a great improvement for graphene transistor characteristics, with a 5-fold mobility improvement and a shift of Dirac point of 50 V. This paper provide a feasible way for the fabrication of solar-blind photodetectors with high responsivity, fast response time and ambient condition performance, which are important for the community of photodetection.
引用
收藏
页码:105 / 111
页数:7
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