Scanning X-ray nanodiffraction: from the experimental approach towards spatially resolved scattering simulations

被引：2

作者：

Dubslaff, Martin ^{[1
]}

Hanke, Michael ^{[1
]}

Patommel, Jens ^{[2
]}

Hoppe, Robert ^{[2
]}

Schroer, Christian G. ^{[2
]}

Schoeder, Sebastian ^{[3
]}

Burghammer, Manfred ^{[3
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Tech Univ Dresden, Inst Strukturphys, D-01069 Dresden, Germany

[3] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

关键词：

Quantum dots; Quantum dot molecules; X-ray nanodiffraction; X-ray scattering simulation; DIFFRACTION; PTYCHOGRAPHY; MICROSCOPY; ISLANDS; OBJECTS; STRAIN;

D O I：

10.1186/1556-276X-7-553

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An enhancement on the method of X-ray diffraction simulations for applications using nanofocused hard X-ray beams is presented. We combine finite element method, kinematical scattering calculations, and a spot profile of the X-ray beam to simulate the diffraction of definite parts of semiconductor nanostructures. The spot profile could be acquired experimentally by X-ray ptychography. Simulation results are discussed and compared with corresponding X-ray nanodiffraction experiments on single SiGe dots and dot molecules.

引用

页数：8

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