Magneto-optical characteristics of Mn-doped ZnO films deposited by ultrasonic spray pyrolysis

被引：14

作者：

Chen, Lung-Chien ^{[1
]}

Tien, Ching-Ho ^{[1
]}

Fu, Chia-Shien ^{[1
]}

机构：

[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2012年 / 15卷 / 01期

关键词：

Mn-doped ZnO; Raman scattering; Interband magneto-optic absorption; Photoluminescence; Auger recombination; LIGHT-EMITTING-DIODES; THIN-FILMS; EXCHANGE INTERACTION; MAGNETIC-PROPERTIES; SPIN INJECTION; TEMPERATURE; PHOTOLUMINESCENCE; SUBSTRATE; GROWTH; GAP;

D O I：

10.1016/j.mssp.2011.04.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work considers a Mn-doped ZnO (ZnO:Mn) film deposited on a slide glass substrate by ultrasonic spray pyrolysis. ZnO:Mn (Mn at 1.5 at%) film with and without an applied magnetic field, is demonstrated to have absorption edges at 2.74 and 2.84 eV, respectively. These values are lower than that of a pure ZnO film because the Mn-doping causes the exchange of s-d and p-d interactions or high carrier concentration. When the ZnO:Mn film is placed in a magnetic field B-z of 0.5 T, an absorption edge and a photoluminescence (PL) shift of about 0.1 eV and 85 meV, respectively, are observed. This shift is attributed to the interband magneto-optic absorption associated with the Landau splitting. The observed shift increases with the amount of Mn dopant. (c) 2011 Elsevier Ltd. All rights reserved.

引用

页码：80 / 85

页数：6

共 38 条

[1] Homoepitaxial growth of non-polar ZnO (11(2)over-bar-0) films on off-angle ZnO substrates by MOCVD [J].

Abe, T. ;

Kashiwaba, Y. ;

Onodera, S. ;

Masuoka, F. ;

Nakagawa, A. ;

Endo, H. ;

Niikura, I. ;

Kashiwaba, Y. .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 :457-460

[2]

Akyuz I., 2006, SEMICONDUCTOR SCI TE, P21

[3] Study of photoluminescence from self-formed GaAs nanocrystallites in As-doped GaN grown by molecular beam epitaxy [J].

Andrianov, AV ;

Novikov, SV ;

Li, T ;

Zhuravlev, IS ;

Harrison, I ;

Larkins, EC ;

Foxon, CT .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (11) :997-1000

[4] Electronic structure of a Mn12 molecular magnet:: Theory and experiment [J].

Boukhvalov, D. W. ;

Al-Saqer, M. ;

Kurmaev, E. Z. ;

Moewes, A. ;

Galakhov, V. R. ;

Finkelstein, L. D. ;

Chiuzbaian, S. ;

Neumann, M. ;

Dobrovitski, V. V. ;

Katsnelson, M. I. ;

Lichtenstein, A. I. ;

Harmon, B. N. ;

Endo, K. ;

North, J. M. ;

Dalal, N. S. .

PHYSICAL REVIEW B, 2007, 75 (01)

[5] DEPENDENCE OF ENERGY-GAP ON X AND T IN ZN1-XMNXSE - THE ROLE OF EXCHANGE INTERACTION [J].

BYLSMA, RB ;

BECKER, WM ;

KOSSUT, J ;

DEBSKA, U ;

YODERSHORT, D .

PHYSICAL REVIEW B, 1986, 33 (12) :8207-8215

[6] Photoresponsivity enhancement of ZnO/Si photodiodes through use of an ultrathin oxide interlayer [J].

Chen, L. -C. ;

Pan, C. -N. .

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2008, 44 (01) :43-46

[7]

Chen L.C., 2008, CRYSTAL J, V1, P10

[8] Photoluminescence and spin relaxation of MnZnO/GaN-based light-emitting diodes [J].

Chen, Lung-Chien ;

Tien, Ching-Ho ;

Luo, Yi-Min ;

Mu, Chien-Sheng .

THIN SOLID FILMS, 2011, 519 (08) :2516-2519

[9] Optoelectronic Properties of the p-MnZnO/n-Si Structure Photodiodes in a Strong Magnetic Field [J].

Chen, Lung-Chien ;

Tien, Ching-Ho ;

Hsu, Ya-Ying .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (06) :0630021-0630023

[10] Solution synthesis, optical and magnetic properties of Zn1-xCoxO nanowires [J].

Cheng, Chuanwei ;

Xu, Guoyue ;

Zhang, Haiqian ;

Luo, Yan ;

Li, Yingying .

MATERIALS LETTERS, 2008, 62 (21-22) :3733-3735

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