High Voltage SiC Vertical JFET for High Power RF Applications

被引：0

作者：

Hecht, Christian ^{[1
]}

Elpelt, Rudolf ^{[1
]}

Schoerner, Reinhold ^{[1
]}

Irsigler, Roland ^{[2
]}

Heid, Oliver ^{[2
]}

机构：

[1] Infineon Technol AG, Schottkystr 10, D-91058 Erlangen, Germany

[2] Siemens AG, Corp Technol, D-91052 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

SiC; JFET; RF module; high-frequency; switching; power; high-voltage;

D O I：

10.4028/www.scientific.net/MSF.717-720.1037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the optimization of a standard lateral channel vertical JFET for high-frequency high-power applications. It will be shown that SiC JFETs are well suited to fulfill the requirements of certain RF applications when compared to silicon devices. Simulations covering the electrical characteristics will be given together with calculations considering the self-heating of the chip in pulsed-power applications and the corresponding decrease in saturation current. The gate-signal propagation will be analyzed for different chip layouts and the effect on switching speed will be described. Electrical results will demonstrate that the optimized JFET is suitable for RF-transmitter applications, like e.g. solid state RF modules as Klystron replacements in linear accelerators.

引用

页码：1037 / +

页数：2

共 50 条

[31] Planar edge terminations for high voltage 4H-SiC power MOSFETs [J].

Soler, Victor ;

Berthou, Maxime ;

Mihaila, Andrei ;

Monserrat, Josep ;

Godignon, Philippe ;

Rebollo, Jose ;

Millan, Jose .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (03)

[32] Design of an Integrated SiC JFET Power Switch and Flyback Diode [J].

Radhakrishnan, Rahul ;

Zhao, Jian H. .

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 :1041-1044

[33] High-Frequency Switching of SiC High-Voltage LJFET [J].

Sheng, Kuang ;

Zhang, Yongxi ;

Yu, Lianochun ;

Su, Ming ;

Zhao, Jian H. .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2009, 24 (1-2) :271-277

[34] 15-kV/40-A FREEDM Supercascode: A Cost-Effective SiC High-Voltage and High-Frequency Power Switch [J].

Song, Xiaoqing ;

Huang, Alex Q. ;

Sen, Soumik ;

Zhang, Liqi ;

Liu, Pengkun ;

Ni, Xijun .

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2017, 53 (06) :5715-5727

[35] A High Voltage Power Supply for Photomultiplier Tube Applications [J].

Zare, Mohammad-Hadi ;

Karimi, Yaser .

2022 13TH POWER ELECTRONICS, DRIVE SYSTEMS, AND TECHNOLOGIES CONFERENCE (PEDSTC), 2022, :56-59

[36] DC characteristics of power SiC-JFET [J].

Bargiel, Kamil ;

Bisewski, Damian .

PRZEGLAD ELEKTROTECHNICZNY, 2018, 94 (08) :63-66

[37] A drain extended FinFET with enhanced DC/RF performance for high-voltage RF applications [J].

Oh, Kyounghwan ;

Kim, Hyangwoo ;

Park, Kangwook ;

Lee, Hyung-jin ;

Kong, Byoung Don ;

Baek, Chang-Ki .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (11)

[38] High-Voltage Capacitance Measurement System for SiC Power MOSFETs [J].

Ralston, Parrish ;

Duong, T. H. ;

Yang, Nanying ;

Berning, D. W. ;

Hood, Colleen ;

Hefner, A. R. ;

Meehan, Kathleen .

2009 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION, VOLS 1-6, 2009, :1404-+

[39] Application of SiC power devices to ultra-high voltage equipment [J].

Nakamura, Takashi ;

Nishioka, Kei ;

Hanada, Toshio ;

Okuda, Takafimi ;

Nishimura, Yoshimi .

2022 IEEE CPMT SYMPOSIUM JAPAN (ICSJ), 2022,

[40] A Cost-Competitive High Performance Junction-FET (JFET) in CMOS Process for RF & Analog Applications [J].

Shi, Yun ;

Rassel, Robert M. ;

Phelps, Richard A. ;

Candra, Panglijen ;

Hershberger, Douglas B. ;

Tian, Xiaowei ;

Sweeney, Susan L. ;

Rascoe, Jay ;

Rainey, BethAnn ;

Dunn, Jim ;

Harame, David .

2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, :237-240

← 1 2 3 4 5 →