Synthesis and postgrowth doping of silicon nanowires

被引：36
作者：
Byon, K
Tham, D
Fischer, JE
Johnson, AT
机构：
[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[2] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 19期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2128070
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-quality silicon nanowires (SiNWs) were synthesized via a thermal evaporation method without the use of catalysts. Scanning electron microscopy and transmission electron microscopy showed that SiNWs were long and straight crystalline silicon with an oxide sheath. Field effect transistors were fabricated to investigate the electrical transport properties. Devices on as-grown material were p-channel with channel mobilities 1-10 cm(2) V-1 s(-1). Postgrowth vapor doping with bismuth converted these to n-channel behavior. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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