Exciton states in spherical parabolic GaAs quantum dots

被引：35

作者：

Garm, T

机构：

[1] Institute of Physics, University of Aalborg, DK-9220 Aalborg Øst

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1996年 / 8卷 / 31期

关键词：

D O I：

10.1088/0953-8984/8/31/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The lowest (s, S) and (p, P) exciton states of a GaAs quantum dot with an isotropic parabolic potential are calculated. Hole states are calculated from the Luttinger-Kohn scheme in the spherical approximation, thus taking light-hole and heavy-hole mixing into account. Exciton states are obtained from an expansion of the wavefunction in a basis formed by products of electron and hole states, and the size dependence of the exciton levels is investigated. By comparison to a one-band model it is found that the effect of valence band mixing is very important and that the one-band model overestimates the exciton energy by more than 20% in the case of strong confinement.

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页码：5725 / 5735

页数：11

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