Transport evidence for pressure-induced superconductivity in CePd2Si2

被引：25
作者：
Raymond, S
Jaccard, D
Wilhelm, H
Cerny, R
机构：
[1] Univ Geneva, Dept Phys Mat Condensee, CH-1211 Geneva, Switzerland
[2] Univ Geneva, Lab Cristallog, CH-1211 Geneva, Switzerland
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 11期
关键词：
superconductors; electronic transport; heavy fermions; strain; high pressure;
D O I：
10.1016/S0038-1098(99)00412-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Resistivity measurements performed under pressure on high quality single crystals of CePd2Si2 are reported. Pressure-induced superconductivity is observed in the range 2-7 Cpa with an optimal T-c of 520 mK at 5.1 Cpa, The superconducting properties of the sample as well as its peculiar zero pressure resistivity are tentatively linked to its preparation. (C) 1999 Elsevier Science Ltd. All rights reserved.
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收藏
页码：617 / 620
页数：4
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