InP/AlGaInP quantum dot laser emitting at short wavelength of 660 nm

被引：0
作者：
Huang, Zhihua [1 ]
Zimmer, Michael [1 ]
Hepp, Stefan [1 ]
Jetter, Michael [1 ]
Michler, Peter [1 ]
机构：
[1] Univ Stuttgart, Ctr Integrated Quantum Sci & Technol IQST, Stuttgart Res Ctr Photon Engn SCoPE, IHFG, Allmandring 3, D-70569 Stuttgart, Germany
来源：
NOVEL IN-PLANE SEMICONDUCTOR LASERS XVIII | 2019年 / 10939卷
关键词：
Semiconductor lasers; red-emitting lasers; InP; AlGaInP; quantum dot; optical gain; MOVPE; THRESHOLD; GAIN;
D O I：
10.1117/12.2509508
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this report, we investigated the optical gain properties and lasing characteristics of a laser structure consisting of one single-layer of self-assembled InP quantum dots in Al0.10GaInP barriers. The optical gain and absorption spectra are obtained by analyzing the amplified spontaneous emission. An internal optical loss value of 5 +/- 2 cm(-1) and a maximum peak modal gain of 39.3 cm(-1) for a single-sheet of QD were obtained at room temperature. The influence of temperature on the gain properties was studied. A 2.24-mm-long laser with uncoated facets emitting at 660 nm was demonstrated. A low threshold current density of 281 A/cm(2) with an external differential quantum efficiency of 34.2% was also achieved.
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页数：6
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