Surface Cleaning Using CO2 Gas Cluster For Semiconductor Device

被引：1

作者：

Cho, Yujin ^{[1
]}

Choi, Hoomi ^{[2
]}

Kim, Taesung ^{[1
,3
]}

机构：

[1] Sungkyunkwan Univ, Sch Mech Engn, Suwon, South Korea

[2] Samaung Elect, Suwon, South Korea

[3] SKKU Adv Inst Nanotechnol, Suwon, South Korea

来源：

SEMICONDUCTOR CLEANING SCIENCE AND TECHNOLOGY 13 (SCST 13) | 2013年 / 58卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1149/05806.0025ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The present semiconductor cleaning technology is based upon chemical cleaning, a high-temperature process that consumes vast amounts of chemicals and ultrapure water. Therefore, this technology gives rise to many environmental issues, and some alternatives are being evaluated. Herein we report, gas cluster cleaning method for cleaning semiconductor devices. Two types of particles such as Ceria (CeO2) and Silica (SiO2) were used to evaluate particle removal efficiency (PRE). It is observed from the field emission scanning electron microscopy (FE-SEM) images that most of particles were removed with PRE more than 90% under various experimental conditions. Further, the pattern damage evaluation is carried out for poly-Si patterns which have width of pattern in the range of 60 to 100 nm. It is observed that there is no pattern damage for various experimental conditions.

引用

页码：25 / 28

页数：4

共 3 条

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